无机材料学报

• 研究论文 •    

插层诱导VSe2相变及其电磁性能调控

李勉1, 楚刘帅2,3, 徐烨菲2,3, 黄庆1   

  1. 1.甬江实验室,宁波 315201;
    2.中国科学院 宁波材料技术与工程研究所,宁波 315201;
    3.中国科学院大学,北京 100049
  • 收稿日期:2026-07-01 修回日期:2026-09-14
  • 作者简介:李 勉, 研究员. E-mail: mian-li@ylab.ac.cn
  • 基金资助:
    国家自然科学基金(U23A2093, 12435017)

Intercalation-induced Phase Transition of VSe2 and Its Electromagnetic Property Modulation

LI Mian1, CHU Liushuai2,3, XU Yefei2,3, HUANG Qing1   

  1. 1. Yongjiang Laboratory, Ningbo 315201, China;
    2. Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China;
    3. University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2026-07-01 Revised:2026-09-14
  • About author:LI Mian, professor. E-mail: mian-li@ylab.ac.cn
  • Supported by:
    National Natural Science Foundation of China (U23A2093, 12435017)

摘要: 随着电子信息技术与无线通信技术的迅猛发展,电磁污染问题日趋严峻,这对高性能电磁波吸收材料的研发提出了迫切需求。微观结构调控是提升吸波材料电磁响应性能的核心途径。本研究提出一种化学插层诱导相变的新型结构调控策略,通过引入Fe、Co、Ni等金属原子对层状过渡金属硫族化合物VSe2进行插层改性,诱导材料发生层间结构重构与局部晶格重排,实现电磁性能的调控和优化。结果表明,在低插层剂量下,插层产物能够维持VSe2原有的晶体结构;在高插层剂量下,由于Fe、Co、Ni与Se元素具有强亲和性,导致VSe2八面体结构单元发生扭曲,形成以VSe2为晶格模板的第二相M0.5VSe2 (M=Fe、Co、Ni)。进一步研究表明,金属插层能够有效调节材料的电子结构与界面特征。随着插层比例的增加,材料的阻抗匹配特性逐步改善,同时材料的极化损耗增强,介电损耗能力得到提升。当形成稳定的M0.5VSe2 (M=Fe、Co、Ni)相结构时,材料在较薄厚度下均表现出优异的电磁波吸收性能。其中,Co插层产物Co0.5VSe2在8.2~12.4 GHz频段的吸波性能相比于VSe2获得了明显提升;当样品厚度为1.68 mm时,最大有效吸收带宽达到2.84 GHz;当厚度为1.84 mm时,最小反射损耗达到-60.10 dB(9.45 GHz处)。本研究证实了插层诱导相变策略在层状材料电磁性能优化中的有效性,为层状过渡金属硫族化合物的结构设计与吸波性能提升提供了新思路与实验依据。

关键词: 二硒化钒(VSe2), 金属插层, 相变调控, 电磁性能, 电磁波吸收性能

Abstract: With the rapid development of electronic information technology and wireless communication, electromagnetic pollution has become increasingly severe, creating an urgent need for high-performance electromagnetic wave absorbing materials. Microstructure regulation is a key approach to enhancing the electromagnetic response performance of absorbers. In this study, a novel structural regulation strategy based on chemical intercalation-induced phase transition was proposed. By intercalating layered transition metal dichalcogenide VSe2 with metal atoms such as Fe, Co, and Ni, interlayer structural reconstruction and local lattice rearrangement were induced, thereby achieving tunable and optimized electromagnetic properties. The results show that at low intercalation doses, the intercalation products retain the original crystal structure of VSe2; at high intercalation doses, however, the strong affinity between Fe, Co, Ni and Se causes distortion of the octahedral structural units in VSe2, leading to the formation of a secondary phase M0.5VSe2 (M = Fe, Co, Ni) using VSe2 as the lattice template. Further studies have revealed that metal intercalation can effectively modulate the electronic structure and interfacial characteristics of the material. With increasing intercalation ratio, the impedance matching characteristics of the material are progressively improved, while the polarization loss is enhanced and the dielectric loss capability is elevated. When a stable M0.5VSe2 (M = Fe, Co, Ni) phase structure is formed, the material exhibits excellent electromagnetic wave absorption performance even at relatively thin thicknesses. For instance, the Co-intercalated reaction product Co0.5VSe2 shows significantly improved absorption performance in the 8.2-12.4 GHz frequency range compared with VSe2, achieving a maximum effective absorption bandwidth of 2.84 GHz at a sample thickness of 1.68 mm, and a minimum reflection loss of -60.10 dB (at 9.45 GHz) at a thickness of 1.84 mm. This study confirms the effectiveness of the intercalation-induced phase transition strategy in optimizing the electromagnetic properties of layered materials, and provides new insights and experimental evidence for the structural design and absorption performance enhancement of layered transition metal dichalcogenides.

Key words: vanadium diselenide (VSe2), metal intercalation, phase transition regulation, electromagnetic property, electromagnetic wave absorption performance

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