Co掺杂GaFeO3陶瓷的结构, 导电及磁性能研究

doi:10.15541/jim20200183

无机材料学报 ›› 2021, Vol. 36 ›› Issue (3): 319-324.DOI: 10.15541/jim20200183

Co掺杂GaFeO₃陶瓷的结构, 导电及磁性能研究

夏朝阳¹^,²(), 王慧¹, 方婧红¹^,², 张阳¹, 汪超越¹, 贺欢¹, 倪津崎¹, 石云¹, 李勤¹, 余建定¹^,²()

1. 中国科学院上海硅酸盐研究所, 上海 200050
2. 中国科学院大学, 北京 100049

收稿日期:2020-04-07 修回日期:2020-06-29 出版日期:2021-03-20 网络出版日期:2020-09-09
通讯作者: 余建定, 研究员. E-mail: yujianding@mail.sic.ac.cn
作者简介:夏朝阳(1995-), 女, 硕士研究生. E-mail: Karenxzy@mail.ustc.edu.cn

Co Incorporation on Structure, Conductivity and Magnetism of GaFeO₃

XIA Zhaoyang¹^,²(), WANG Hui¹, FANG Jinghong¹^,², ZHANG Yang¹, WANG Chaoyue¹, HE Huan¹, NI Jinqi¹, SHI Yun¹, LI Qin¹, YU Jianding¹^,²()

1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
2. University of Chinese Academy of Sciences, Beijing 100049, China

Received:2020-04-07 Revised:2020-06-29 Published:2021-03-20 Online:2020-09-09
Contact: YU Jianding, professor. E-mail: yujianding@mail.sic.ac.cn
About author:XIA Zhaoyang(1995-), female, Master candidate. E-mail: Karenxzy@mail.ustc.edu.cn
Supported by:
Joint Funds of the National Natural Science Foundation of China(U1738114);Shanghai Science and Technology Committee(19DZ1100703);Shanghai Science and Technology Committee(19511107600);Shanghai Sailing Program(17YF1421500);Collaborative Research Project of Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology

摘要/Abstract

摘要：

GaFeO₃因其磁电耦合效应成为目前极具潜质的多铁性材料之一。本工作采用固相烧结法制备了不同钴掺杂浓度的铁酸镓陶瓷, 并研究了钴的掺杂浓度对铁酸镓陶瓷的相组成, 微观结构形貌, 漏电流及磁性的影响。XRD及Rietveld精修结果显示除了主相GaFeO₃, 还存在第二相, 且随着钴含量的增加, 第二相含量逐渐增加, 晶体的畸变程度增大; 因为掺入二价阳离子Co ²⁺并引入了第二相, 样品的漏电性能和纯GaFeO₃陶瓷相比显著改善; 当钴掺杂浓度为2at%时, 样品的漏电流密度相较于GaFeO₃降低了7个数量级; 掺入Co ²⁺引入第二相且晶格畸变程度增加使得GaFeO₃的磁性增强。研究结果表明: 铁酸镓中掺杂微量的钴可以改善磁性, 并使漏电流大幅降低而磁转变温度无明显下降。

关键词: 钴掺杂铁酸镓, 固相烧结, 漏电流, 磁转变温度

Abstract:

GaFeO₃ is one of the most promising ferromagnetic materials due to its magnetoelectric coupling effect. GaFe_1-_xCo_xO₃ (x=0, 0.02, 0.05, 0.07, 0.10) ceramics were prepared by the conventional solid-state method, and the effect of Co substitution on the microstructure, electrical leakage and magnetic properties was investigated. The XRD patterns and Rietveld refinement using the FullProf package showed that the secondary phase with a Fd3ˉm space group was present in addition to the main GFO phase with a Pc2₁n space group, and with an increase of Co doping, the proportion of the secondary phase and the lattice distortion increased. The leakage current density of the GFCO-x samples decreased by approximately 7 orders of magnitude for Co=2at%. The improved magnetization in GFCO ceramics was attributed to the secondary phase and enhanced lattice distortion. This work suggests that the magnetism was improved by doping Co and the leakage current would be decreased sharply without prominent fluctuation of T_C in the meantime by the incorporation of trace amounts of Co.

Key words: Co-doping GaFeO₃, solid-state sintering, leakage, magnetic transition temperature

中图分类号:

TQ174

夏朝阳, 王慧, 方婧红, 张阳, 汪超越, 贺欢, 倪津崎, 石云, 李勤, 余建定. Co掺杂GaFeO₃陶瓷的结构, 导电及磁性能研究[J]. 无机材料学报, 2021, 36(3): 319-324.

XIA Zhaoyang, WANG Hui, FANG Jinghong, ZHANG Yang, WANG Chaoyue, HE Huan, NI Jinqi, SHI Yun, LI Qin, YU Jianding. Co Incorporation on Structure, Conductivity and Magnetism of GaFeO₃[J]. Journal of Inorganic Materials, 2021, 36(3): 319-324.

图/表 7

Fig. 1 XRD patterns of GFCO-x ceramics at room temperature

Table 1 Phase ratios for GFCO-x (x = 0, 1, 2, 3, 4) samples calculated by Rietveld refinement

Sample	Main phase	Secondary phase
GFCO-0	100.00(0.88)	-
GFCO-1	98.37(0.95)	1.63(0.20)
GFCO-2	96.43(0.49)	3.57(0.18)
GFCO-3	77.52(0.94)	22.48(0.50)

Fig. 2 Rietveld refined XRD patterns of GFCO-x ceramics prepared by conventional solid-state sintering method

Fig. 3 Composition versus cell unit parameters for (a) a, (b) b, (c) c, (d) V

Fig. 4 SEM morphologies of GFCO-x samples and the insets are the distribution of particles size ((a) x=0, (b) x=1, (c) x=2, (d) x=3); (e) EDS spectra of two phases in GFCO-1 sample

Fig. 5 (a) Current density curves as a function of applied field in the GFCO-x (x= 0, 1, 2) ceramics, with insets showing P-E loops of GFO and GFCO-1; (b) Variation of current density in the GFCO-x ceramics

Fig. 6 (a) Temperature dependence of the magnetization for GFCO-x samples and (b) M-H curves of GFCO-x samples at 300 K

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Co掺杂GaFeO₃陶瓷的结构, 导电及磁性能研究

Co Incorporation on Structure, Conductivity and Magnetism of GaFeO₃

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