无机材料学报 ›› 2021, Vol. 36 ›› Issue (3): 319-324.DOI: 10.15541/jim20200183 CSTR: 32189.14.10.15541/jim20200183

• 研究快报 • 上一篇    下一篇

Co掺杂GaFeO3陶瓷的结构, 导电及磁性能研究

夏朝阳1,2(), 王慧1, 方婧红1,2, 张阳1, 汪超越1, 贺欢1, 倪津崎1, 石云1, 李勤1, 余建定1,2()   

  1. 1. 中国科学院 上海硅酸盐研究所, 上海 200050
    2. 中国科学院大学, 北京 100049
  • 收稿日期:2020-04-07 修回日期:2020-06-29 出版日期:2021-03-20 网络出版日期:2020-09-09
  • 通讯作者: 余建定, 研究员. E-mail: yujianding@mail.sic.ac.cn
  • 作者简介:夏朝阳(1995-), 女, 硕士研究生. E-mail: Karenxzy@mail.ustc.edu.cn

Co Incorporation on Structure, Conductivity and Magnetism of GaFeO3

XIA Zhaoyang1,2(), WANG Hui1, FANG Jinghong1,2, ZHANG Yang1, WANG Chaoyue1, HE Huan1, NI Jinqi1, SHI Yun1, LI Qin1, YU Jianding1,2()   

  1. 1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
    2. University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2020-04-07 Revised:2020-06-29 Published:2021-03-20 Online:2020-09-09
  • Contact: YU Jianding, professor. E-mail: yujianding@mail.sic.ac.cn
  • About author:XIA Zhaoyang(1995-), female, Master candidate. E-mail: Karenxzy@mail.ustc.edu.cn
  • Supported by:
    Joint Funds of the National Natural Science Foundation of China(U1738114);Shanghai Science and Technology Committee(19DZ1100703);Shanghai Science and Technology Committee(19511107600);Shanghai Sailing Program(17YF1421500);Collaborative Research Project of Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology

摘要:

GaFeO3因其磁电耦合效应成为目前极具潜质的多铁性材料之一。本工作采用固相烧结法制备了不同钴掺杂浓度的铁酸镓陶瓷, 并研究了钴的掺杂浓度对铁酸镓陶瓷的相组成, 微观结构形貌, 漏电流及磁性的影响。XRD及Rietveld精修结果显示除了主相GaFeO3, 还存在第二相, 且随着钴含量的增加, 第二相含量逐渐增加, 晶体的畸变程度增大; 因为掺入二价阳离子Co 2+并引入了第二相, 样品的漏电性能和纯GaFeO3陶瓷相比显著改善; 当钴掺杂浓度为2at%时, 样品的漏电流密度相较于GaFeO3降低了7个数量级; 掺入Co 2+引入第二相且晶格畸变程度增加使得GaFeO3的磁性增强。研究结果表明: 铁酸镓中掺杂微量的钴可以改善磁性, 并使漏电流大幅降低而磁转变温度无明显下降。

关键词: 钴掺杂铁酸镓, 固相烧结, 漏电流, 磁转变温度

Abstract:

GaFeO3 is one of the most promising ferromagnetic materials due to its magnetoelectric coupling effect. GaFe1-xCoxO3 (x=0, 0.02, 0.05, 0.07, 0.10) ceramics were prepared by the conventional solid-state method, and the effect of Co substitution on the microstructure, electrical leakage and magnetic properties was investigated. The XRD patterns and Rietveld refinement using the FullProf package showed that the secondary phase with a Fd3ˉm space group was present in addition to the main GFO phase with a Pc21n space group, and with an increase of Co doping, the proportion of the secondary phase and the lattice distortion increased. The leakage current density of the GFCO-x samples decreased by approximately 7 orders of magnitude for Co=2at%. The improved magnetization in GFCO ceramics was attributed to the secondary phase and enhanced lattice distortion. This work suggests that the magnetism was improved by doping Co and the leakage current would be decreased sharply without prominent fluctuation of TC in the meantime by the incorporation of trace amounts of Co.

Key words: Co-doping GaFeO3, solid-state sintering, leakage, magnetic transition temperature

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