Journal of Inorganic Materials ›› 2017, Vol. 32 ›› Issue (2): 215-218.doi: 10.15541/jim20160250

• Orginal Article • Previous Articles     Next Articles

Growth of Hexagonal AlN Crystalline Microrod by Physical Vapor Transport Method

Hua-Jie WANG1,2, Xue-Chao LIU1(), Hai-Kuan KONG1, Jun XIN1, Pan GAO1, Shi-Yi ZHUO1, Er-Wei SHI1   

  1. 1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
    2. University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2016-04-13 Online:2017-02-20 Published:2017-01-13
  • About author:WANG Hua-Jie(1992–), male, candidate of master degree. E-mail: wanghj.mail@foxmail.com
  • Supported by:
    Foundation item: National High-tech R&D program of China (863 Program, 2014AA032602);National Key R&D program (2016YFB0400400) Shanghai Engineering Research Center of Single Crystal Silicon Carbide

Abstract:

Hexagonal aluminium nitride (AlN) microrods with high crystalline quality were grown by physical vapor transport (PVT) method at low growth temperature between 1700 and 1850℃. The length of as-grown microrod is around 1 cm, and the width between 200-400 μm. The microrod exhibits typical hexagonal geometrical shape with pale yellow color under optical microscopy. Scanning electron microscope (SEM) and atomic force microscope (AFM) images show each microrod with closely arranged step waviness, of which the step interval is 2-4 μm and the height several nanometers. Raman spectrum characterization showed characteristic peaks of high crystalline AlN. The rod-like structure is attributed to slow growth velocity at lower crystalline temperature, enabling Al and N atoms having enough time to move to the lower energy site and to form hexagonal microrod along <0001> direction. High quality hexagonal AlN microrod is an enrichment to one-dimensional semiconductor materials. Data from this study suggest that, by further study on size and impurity control, high performance miniaturized opto-electronic device is hopeful to be achieved.

Key words: III-V semiconductors, aluminum nitride, hexagonal microrod, physical vapor transport

CLC Number: 

  • O78