Journal of Inorganic Materials ›› 2013, Vol. 28 ›› Issue (5): 474-478.doi: 10.3724/SP.J.1077.2013.12353

• Orginal Article • Previous Articles     Next Articles

In situ Synthesis and Growth Mechanism of SiC Nanowires in SiCO Porous Ceramics

Jian-Mei PAN, Xiao-Nong CHENG, Xue-Hua YAN, Cheng-Hua ZHANG, Gui-Fang XU   

  1. School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China
  • Received:2012-05-28 Revised:2012-07-30 Online:2013-05-10 Published:2013-04-22
  • About author:PAN Jian-Mei. E-mail: jmpanc@163.com
  • Supported by:
    Materials Tribology Key Laboratory of Jiangsu Opening Foundation (kjsmcx07005);Natural Science Foundation of the Jiangsu High Education (08KJD430010);Postgraduate Innovation Project of Jiangsu Province (CXZZ11_0558);Talent Foundation of Jiangsu University (09jdg033);Changshu Research Project (CG201005)

Abstract:

SiC nanowires were in situ prepared in Ar atmosphere using polyurethane sponge as a porous template infiltrated with silicone resin. Characterizations of the samples were carried out by TG, XRD, SEM and TEM. The effects of the holding time on the synthesis of SiC nanowires were observed. The growth mechanism of SiC nanowires was discussed. The experimental results show that SiC nanowires were grown directly within the pores of the porous ceramics. The lengths of these nanowires are up to several tens of micrometers and single nanowire has a districtive diameter. The growth mechanism of the nanowires is supported by VS growth model. With the increase of the holding time, the amount of the nanowires increases and these nanowires present different morphologies. Furthermore, the specific surface area of the porous ceramics increases significantly and the volume resistivity decreases.

Key words: SiC nanowires, polymeric precursors, porous ceramics, in-situ synthesis

CLC Number: 

  • TQ174