In situ Synthesis and Growth Mechanism of SiC Nanowires in SiCO Porous Ceramics

doi:10.3724/SP.J.1077.2013.12353

Abstract

Abstract:

SiC nanowires were in situ prepared in Ar atmosphere using polyurethane sponge as a porous template infiltrated with silicone resin. Characterizations of the samples were carried out by TG, XRD, SEM and TEM. The effects of the holding time on the synthesis of SiC nanowires were observed. The growth mechanism of SiC nanowires was discussed. The experimental results show that SiC nanowires were grown directly within the pores of the porous ceramics. The lengths of these nanowires are up to several tens of micrometers and single nanowire has a districtive diameter. The growth mechanism of the nanowires is supported by VS growth model. With the increase of the holding time, the amount of the nanowires increases and these nanowires present different morphologies. Furthermore, the specific surface area of the porous ceramics increases significantly and the volume resistivity decreases.

Key words: SiC nanowires, polymeric precursors, porous ceramics, in-situ synthesis

CLC Number:

TQ174

PAN Jian-Mei, CHENG Xiao-Nong, YAN Xue-Hua, ZHANG Cheng-Hua, XU Gui-Fang. In situ Synthesis and Growth Mechanism of SiC Nanowires in SiCO Porous Ceramics[J]. Journal of Inorganic Materials, 2013, 28(5): 474-478.

Figures/Tables 7

Fig. 1 TG curve of the cured sponge/silicone resin in Ar atmosphere

Fig. 2 XRD patterns of the samples holding at 1400℃ for different time

Fig. 3 SEM images and EDS analysis of the sample holding at 1400℃ for 1 h

Fig. 4 SEM images of the sample holding at 1400℃ for 2 h

Fig. 5 SEM images of the sample holding at 1400℃ for 3 h

Fig. 6 TEM images of SiC nanowires: (a-c) different morphologies of SiC nanowires and the corresponding SEAD pattern (see insert in Fig. 6(c)) of the nanowire, and (d) HRTEM image of the nanowire

Table 1 Porosity, specific surface area and volume resistivity of the samples holding at 1400℃ for different time

Holding time/h	Porosity/%	Specific surface area /(m²·g^-1)	Volume resistivity /(Ω·cm)
1	82.3	32	0.135
2	84.5	37	0.092
3	85.4	45	0.065

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