Journal of Inorganic Materials ›› 2017, Vol. 32 ›› Issue (9): 985-990.doi: 10.15541/jim20160664

• Orginal Article • Previous Articles     Next Articles

Technology of Preparing Diamond Wire Cut Multicrystalline Silicon Wafer Texture Surfac

Xiao-Wei WU1,2(), Jia-Yan LI1,2(), Yi TAN1,2   

  1. 1. School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
    2. Key Laboratory for Solar Energy Photovoltaic System of Liaoning Province, Dalian 116024, China
  • Received:2016-11-29 Revised:2017-01-18 Online:2017-09-30 Published:2017-08-29
  • About author:WU Xiao-Wei. E-mail: wuxiaowei261@mail.dlut.edu.cn

Abstract:

The texturization technology of multicrystalline silicon wafers is the key step of solar cell manufacture. Based on the acid etching technology widely used in industrial-scale manufacture, the influence of etching time and the components concentration of etching solution on the structure of texturization surface and reflectivity were investigated. In addition, the metal-catalyzed chemical etching technology was used to process the texture surface. The etching solution used in this method consists of hydrofluoric acid (HF) and silver nitrate (AgNO3). At the same time, the texture surface and reflectivity of silicon wafers etched by these two technologies were compared to select the ideal texture surface with uniform structure and low reflectivity. The results show that the best texture surface structure and reflectivity can be obtained under following reaction conditions: concentrations of HF and AgNO3 of 4.6 mol/L and 0.02 mol/L, respectively, reaction time of 90 min, and room temperature. The average reflectivity of silicon wafer after etching in this condition is 8 %, which is far lower than that by traditional method in current industry.

Key words: diamond wire-sawing, multicrystalline silicon, texturization, reflectivity

CLC Number: 

  • TM914