Journal of Inorganic Materials ›› 2017, Vol. 32 ›› Issue (6): 621-624.doi: 10.15541/jim20160446

• Orginal Article • Previous Articles     Next Articles

Growth and Property of In:Ga2O3 Oxide Semiconductor Single Crystal

Hui-Li TANG1,2(), Qing-Hui WU2,3, Ping LUO1,2, Qing-Guo WANG1,2, Jun XU1,2()   

  1. 1. School of Physics Science and Engineering, Tongji University, Shanghai 200092, China 2. Shanghai Engineering Research Center for Sapphire Crystals, Shanghai 201800, China
    3. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
  • Received:2016-07-28 Revised:2016-08-26 Online:2017-06-20 Published:2017-05-27
  • About author:TANG Hui-Li. E-mail:
  • Supported by:
    National Natural Science Foundation of China (91333106);Science and Technology Commission of Shanghai Municipality (13521102700);Science and Technology Commission of Shanghai Municipality (14DZ2252500);Fundamental Research Funds for the Central Universities (2015KJ040, 1370219229)


β-Ga2O3 crystal is a novel oxide semiconductor with wide bandgap, but its intrinsic conductive capability is poor. Ion doping is an effective way to regulate conductivity, transparency and crystallinity of the crystal. Transparent blue In:Ga2O3 single crystal with the dimension ofφ8 mm×50 mm was grown by optical floating zone method. The as-grown crystal is of good crystallization quality. After doping In3+ ion, β-Ga2O3 crystal has strong infrared absorption, and its thermal conductivity slightly decreases. At room temperature, the electrical conductivity and carrier concentration of as-grown In:Ga2O3 crystal are 4.94×10-4 S/cm and 1.005×1016 cm-3, respectively, which are approximately one order magnitude higher than that of undoped β-Ga2O3 crystal. The electrical property of In:Ga2O3 crystal is sensitive to heat treatment. After annealing at 1200℃ in air or in argon, its electrical conductivity decreases. These experimental results suggest that In3+ ion doping can improve the electrical property of β-Ga2O3 single crystal.

Key words: In:Ga2O3 single crystal, optical floating zone method, electrical conductivity

CLC Number: 

  • O78