Journal of Inorganic Materials ›› 2014, Vol. 29 ›› Issue (11): 1145-1150.doi: 10.15541/jim20140173

• Orginal Article • Previous Articles     Next Articles

Structure and Dielectric Properties of Sc3+- and Ru4+-doped BZN Based Ceramics

Qian ZHANG(), Shi-Hua DING(), Tian-Xiu SONG, Xiao-Song PENG, Xu LIU, Xu-Feng JIANG   

  1. College of Materials Science and Engineering, Xihua University, Chengdu 610039, China
  • Received:2014-04-08 Revised:2014-05-15 Online:2014-11-20 Published:2014-10-24
  • About author:ZHANG Qian. E-mail:
  • Supported by:
    National Natural Science Foundation of China(11074203);Chunhui Prpject of Ministry of Education(Z2011077);Major Project of Education Department in Sichuan(14ZB0126);The Graduate Innovation Foundation of Xihua University(YCJJ2014046,YCJJ2014049,YCJJ2014050)


The dense Bi1.4Sc0.1ZnNb1.5-xRuxO7 ceramics were prepared by traditional solid state reaction. The effect of Sc3+ and Ru4+ co-substitution on the phase structure, crystal chemistry and dielectric properties of Bi2O3-ZnO- Nb2O5 were investigated. The results reveal that all doped samples show a pure α-BZN phase structure. When x=0.055 mol, the intensity of X-ray diffraction becomes weak and diffraction peaks broaden. With the increase of x, the lattice constant a and the average distance R(A-O') of the ceramics decrease. The bond valance calculation show that the AV(O')[A4] and oxygen ξ parameter of 48f(O) increase, but the AV(O)[A2B2] gradually decreases with the amount of Ru4+ increasing. Meanwhile, the dielectric constant of samples decreases and the dielectric loss increases. The dielectric relaxation characteristics are weakened at room temperature while the relaxation behavior at low temperature is obvious. With increasing dopant, Tm shifts toward higher temperature. The εr-T curves of samples are fitted by the modified Curie-Weiss’s (C-W) formula. The calculations show that the degree of dielectric relaxation (γ) decreases from 1.57 to 1.33 when the Ru4+ content increases from 0 to 0.04 mol.

Key words: α-BZN, oxygen parameter ξ at 48f site, modified Curie-Weiss’s formula, dielectric relaxation

CLC Number: 

  • TQ174