无机材料学报 ›› 2019, Vol. 34 ›› Issue (8): 862-866.DOI: 10.15541/jim20180473

• 研究论文 • 上一篇    下一篇

低温反应溅射Al+α-Al2O3复合靶沉积α-Al2O3薄膜

程奕天1,2,邱万奇1(),周克崧1,2,刘仲武1,焦东玲1,钟喜春1,张辉1   

  1. 1. 华南理工大学 材料科学与工程学院, 广州 510640
    2. 广东省新材料研究所 现代材料表面工程技术国家工程实验室, 广东省现代表面工程技术重点实验室, 广州 510651
  • 收稿日期:2018-10-10 修回日期:2019-02-22 出版日期:2019-08-20 发布日期:2019-05-29
  • 作者简介:程奕天(1990-), 男, 博士研究生. E-mail: <email>ytcheng220@gmail.com</email>
  • 基金资助:
    国家自然科学基金(51271079);广东省科技计划项目(2017B030314122);广州市科技计划项目(201607010091)

Low-temperature Deposition of α-Al2O3 Films by Reactive Sputtering Al+α-Al2O3 Target

CHENG Yi-Tian1,2,QIU Wan-Qi1(),ZHOU Ke-Song1,2,LIU Zhong-Wu1,JIAO Dong-Ling1,ZHONG Xi-Chun1,ZHANG Hui1   

  1. 1. School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
    2. The Key Lab of Guangdong for Modern Surface Engineering Technology, National Engineering Laboratory for Modern Materials Surface Engineering Technology, Guangdong Institute of New Materials, Guangzhou 510651, China
  • Received:2018-10-10 Revised:2019-02-22 Online:2019-08-20 Published:2019-05-29
  • Supported by:
    National Natural Science Foundation of China(51271079);Science and Technology Planning Project of Guangdong Province(2017B030314122);Science and Technology Program of Guangzhou(201607010091)

摘要:

低温沉积α-Al2O3薄膜是拓展其实际工程应用的关键。本研究以Al、α-Al2O3和Al + 15wt% α-Al2O3为靶材, 用射频磁控溅射在Si(100)基体上沉积氧化铝薄膜。用掠入射X射线衍射(GIXRD)、透射电子显微镜(TEM)、能谱仪(EDS)对所沉积薄膜的相结构和元素含量进行研究, 用纳米压痕技术测量薄膜硬度。结果表明, 在550 ℃的基体温度下, 反应射频磁控溅射Al+α-Al2O3靶可获得单相α-Al2O3薄膜。靶中的α-Al2O3溅射至基片表面能优先形成α-Al2O3晶核, 在550 ℃及以上的基体温度下可抑制γ相形核, 促进α-Al2O3晶核同质外延生长, 并最终形成单相α-Al2O3薄膜。

关键词: α-Al2O3, 反应溅射, 复合靶, 低温沉积, 纳米压痕

Abstract:

Low-temperature deposition of α-Al2O3 film is the key to expand its industrial applications. Al, α-Al2O3 and Al + 15wt% α-Al2O3 targets were used to deposit alumina films on Si(100). The as-deposited films by radio frequency magnetron sputtering (RFMS) were analyzed by grazing incidence X-ray diffraction (GIXRD), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS), and the nano-hardness was measured by depth-sensing indentation method. The results show that the single phase α-Al2O3 films were successfully deposited by reactive sputtering the Al+α-Al2O3 composite target at 550 ℃. When deposited at the substrate temperature of 550 ℃, the α-Al2O3 sputtered from the target preferentially form α-Al2O3 nucleus which could suppress the formation of γ phase, and promote the homoepitaxial growth of the α-Al2O3 to obtain the single phase α-Al2O3 films.

Key words: α-Al2O3, reactive sputtering, composite target, low-temperature deposition, nano-indentation

中图分类号: