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Journal of Inorganic Materials

Journal of Inorganic Materials >

2007 , Vol. 22 >Issue 3: 545 - 549

DOI: https://doi.org/10.3724/SP.J.1077.2007.00545

Research Paper

β-FeSi2 thin film prepared by femtosecond laser ablation and its optical characteristic

  • ZHOU You-Hua ,
  • LU Pei-Xian ,
  • YANG Guang ,
  • YANG Yi-Fa ,
  • ZHENG Qi-Guang
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  • 1. State Key Laboratory of Laser Technology, Huazhong University of Science and Technology, Wuhan 430074, China; 2. Physics & Information School of Jianghan University, Wuhan 430056, China

Received date: 2006-06-20

  Revised date: 2006-09-06

  Online published: 2007-05-20

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Abstract

The even single phase β-FeSi2 thin films were prepared by femtosecond laser deposition on Si (100) and Si (111) wafers using a FeSi2 alloy target. X-ray diffraction, field scanning electron microscope (FSEM), energy dispersive X-ray microanalysis (EDX), Fourier-transform Raman infrared spectroscope (FTRIS) were used to characterize the structure, composition, and properties of β-FeSi2 films. The growth of β-FeSi2 depends on the orientation of Si substrates. The photoluminescence from the grown single phase β-FeSi2 thin film observed at room temperature (2℃) is at a wavelength of 1.53 μm. Raman peaks of β-FeSi2 observed by an Raman microscope with 514.5nm argon laser are at 192.9cm-1, 243.9cm-1 and other positions.

Key words： β-FeSi2; femtosecond laser; pulsed laser deposition (PLD); photoluminescence.

Cite this article

ZHOU You-Hua , LU Pei-Xian , YANG Guang , YANG Yi-Fa , ZHENG Qi-Guang . β-FeSi2 thin film prepared by femtosecond laser ablation and its optical characteristic[J]. Journal of Inorganic Materials, 2007 , 22(3) : 545 -549 . DOI: 10.3724/SP.J.1077.2007.00545

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