Adv. Search
Journal of Inorganic Materials

Journal of Inorganic Materials >

2007 , Vol. 22 >Issue 3: 570 - 576

DOI: https://doi.org/10.3724/SP.J.1077.2007.00570

Research Paper

Influence of Methane Concentration on Crystal Growing Process in CVD Free Standing Diamond Films

  • ZHU Hong-Xi ,
  • MAO Wei-Min ,
  • FENG Hui-Ping ,
  • LU Fan-Xiu ,
  • Vlasov I I ,
  • Ralchenko V G ,
  • Khomich A V
Expand
  • 1. Department of Materials, University of Science and Technology Beijing, Beijing 100083, China; 2. State Key Laboratory of Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, China; 3. Institute of Functional Materials, University of Science and Technology Beijing, Beijing 100083, China; 4. General Physics Institute, Russia Academy of Sciences, Moscow 119991, Russia; 5. Institute of Radio Engineering & Electronics, Russia Academy of Sciences, Fryazino 141190, Russia

Received date: 2006-07-04

  Revised date: 2006-08-28

  Online published: 2007-05-20

Fold

Abstract

The Macro-texture, grain boundary distribution and surface morphlolgy in CVD free standing diamond films deposited with different methane concentrations were observed by X ray diffraction technology, electron backscatter diffraction and SEM. The crystal growing process of {100} and {111} planes in diamond crystal was studied. It is shown that diamond films adsorb activated radical CH22- on {100} plane or adsorb CH3- and CH3- on {111} plane alternately. Carbon atoms stack on the film surface during dehydrogenation. At low methane concentration, the expansion ratio of {111} planes is close to, but faster
than that of {100} planes because of their relative lower surface energy. The enhanced driving force induced by the increased methane concentration results in faster growth of {100} plane than that of {111} plane, which promotes the formation of {100} texture. The film surface morphology consisits of the exposured {100} planes that are parallel to the film surface and the exposured {111} planes area as the side surface that decrease during the competition growth, which is different from that of single crystal growth.

Key words： diamond film; texture; crystalgrowing; surface structure

Cite this article

ZHU Hong-Xi , MAO Wei-Min , FENG Hui-Ping , LU Fan-Xiu , Vlasov I I , Ralchenko V G , Khomich A V . Influence of Methane Concentration on Crystal Growing Process in CVD Free Standing Diamond Films[J]. Journal of Inorganic Materials, 2007 , 22(3) : 570 -576 . DOI: 10.3724/SP.J.1077.2007.00570

References

[1] 林良武, 唐元洪, 朱利兵(LIN liang-Wu, { et al). 无机材料
学报(Journal of Inorganic Materials), 2005, 20 (5): 1263--1268.
[2] Yan C S, Yogesh K, Vohra M N. Diamond and Related Materials, 1998, 8 (12): 2022--2031.
[3] Hollman P, Alahelisten A, Olsson M. Thin Solid Films, 1995, 270 (1): 137--142.
[4] Shang N G, Lee C. Diamond and Related Materials, 2000, 9 (8): 1388--1392.
[5] YU Z, Flodstrom A. Diamond and Related Materials, 1997, 6 (1): 81--84.
[6] Buhler J, Prior Y. Journal of Crystal Growth, 2000, 209 (4): 779--788.
[7] Kuang Y, Badzian A, Tsong T, et al. Thin Solid Films, 1996, 272 (1): 49--51.
[8] Sun H, Yu S, jiang Z, et al. Diamond and Related Materials, 1996, 5 (11): 1308--1312.
[9] Yu Z, Karlsson U, Flodstron A. Thin Solid Films, 1999, 142 (1): 74--82.
[10] Lu F X, Tang W Z, Huang T B, et al, Diamond and Related Materials, 2001, 10 (9): 1551--1556.
[11] Evelyn M P, Graham J D, Martin L R. Diamond and Related Materials, 2001, 10 (9): 1627--1632.
[12] Martin L R. J. Appl Phys, 1991, 70 (10): 5667--5674.
[13] Harris S J, Belton D N. Thin Solid Films, 1992, 212 (1): 193--200.
[14] Battle C C, Srolovitz D J, Butler J E. Journal of Crystal Growth, 1998, 194 (3): 353--368.
[15] Maeda H, Ohtsubo K, Irke M, et al. J. Mater Res, 1995, 10 (12): 3115--3123.
[16] Titus E, Sikder A K, Paltnikar U, et al. Diamond and related materials, 2002, 11 (7): 1403--1408.
[17] 毛卫民, 朱宏喜, 陈冷, 等(MAO Wei-Min, et al).
无机材料学报(Journal of Inorganic Materials), 2006, 21 (1): 239-244.
[18] Chu C J, Hauge R H, Margrave J L, et al. Appl. Phys. Lett., 1992, 61 (12): 1393--1395.
[19] Mao W, Zhu H, Chen L, et al. Materials Science and Technology, 2005, 21 (12): 1383--1386.
[20] Schermer J J, Theije F K, Elst W A. Journal of Crystal Growth, 2002, 243 (2): 302--318.
Options
Outlines

/

〈 〉