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Journal of Inorganic Materials

Journal of Inorganic Materials >

2009 , Vol. 24 >Issue 4: 783 - 786

DOI: https://doi.org/10.3724/SP.J.1077.2009.00783

Research Paper

R-plane Sapphire Substrate for Non-polar GaN Film

  • YANG Xin-Bo ,
  • XU Jun ,
  • LI Hong-Jun ,
  • BI Qun-Yu ,
  • CHENG Yan ,
  • SU Liang-Bi ,
  • ZHOU Guo-Qing
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  • 1. Key Laboratory of Transparent and OptoFunctional Advanced Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China; 2. Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China; 3 Graduate University of the Chinese Academy of Sciences, Beijing 100049, China

Received date: 2008-12-05

  Revised date: 2009-02-09

  Online published: 2009-07-20

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Abstract

R-plane sapphire used for epitaxial growth of non-polar GaN film was grown by the temperature gradient technique (TGT) method and chemical mechanical method was used to polish the r-plane sapphire substrate. The crystallization quality, optical property and surface roughness of as-obtained r-plane sapphire substrate were investigated. The average full width at half maximum (FWHM) of the substrate is 19.4arcsec and the dislocation density is 5.6×103cm-2. The transmission of the substrate is higher than 80% when the wavelength is longer than 300nm and the optical homogeneity is 6.6×10-5. The average surface roughness of the r-plane sapphire substrate is 0.49nm. The results indicate that as-obtained r-plane sapphire substrate meets the basic standard of GaN substrate.

Key words： r-plane sapphire; non-polar GaN; substrate

Cite this article

YANG Xin-Bo , XU Jun , LI Hong-Jun , BI Qun-Yu , CHENG Yan , SU Liang-Bi , ZHOU Guo-Qing . R-plane Sapphire Substrate for Non-polar GaN Film[J]. Journal of Inorganic Materials, 2009 , 24(4) : 783 -786 . DOI: 10.3724/SP.J.1077.2009.00783

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