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Journal of Inorganic Materials

Journal of Inorganic Materials >

2009 , Vol. 24 >Issue 3: 591 - 594

DOI: https://doi.org/10.3724/sp.j.1077.2009.00591

Research Paper

Magnetroresistance and Currentvoltage Characteristics in La2/3Sr1/3MnO3/ZnO Composite Films

  • JIN Ke-Xin ,
  • ZHAO Sheng-Gui ,
  • TAN Xing-Yi ,
  • CHEN Chang-Le
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  • Department of Applied Physics, Northwestern Polytechnical University, Xi’an 710072, China

Received date: 2008-07-23

  Revised date: 2008-09-09

  Online published: 2009-05-20

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Abstract

agnetroresistance and currentvoltage characteristics of the composite (La2/3Sr1/3MnO3)x/(ZnO)1-x films prepared by the pulsed laser deposition method on Si(100) substrates oxidized by SiO2 were investigated. XRD patterns indicate that ZnO and LSMO have (002) and (101) dominant orientations, respectively, and they form the coexisting system of two phases. Experimental results show the film with x=0.3 favors a semiconductive conduction and the film with x=0.4 exhibits the typical insulatormetal (I-M) transition. The films have the low field magnetoresistance（LFMR） effect and the nonlinear currentvoltage characteristics. The maximum LFMR value of the film with x=0.3 is about 28.8% at T=60K under an applied magnetic field of about 0.7T. The currentvoltage fitting shows that a great number of interface states appear at the depletion between La2/3Sr1/3MnO3 and ZnO grains due to the mismatch of the lattice.

Key words： manganites composite film; magnetoresistance; currentvoltage characteristics

Cite this article

JIN Ke-Xin , ZHAO Sheng-Gui , TAN Xing-Yi , CHEN Chang-Le . Magnetroresistance and Currentvoltage Characteristics in La2/3Sr1/3MnO3/ZnO Composite Films[J]. Journal of Inorganic Materials, 2009 , 24(3) : 591 -594 . DOI: 10.3724/sp.j.1077.2009.00591

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