Research Paper

Fabrication of ZnO p-n Homojunction by Ultrasonic Spray Pyrolysis and Its Electroluminescence Properties

  • BIAN Ji-Ming ,
  • LIU Wei-Feng ,
  • HU Li-Zhong ,
  • LIANG Hong-Wei
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  • State Key Laboratory for Materials Modification by Laser, Ion, Electron Beams, School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China

Received date: 2006-01-16

  Revised date: 2006-07-19

  Online published: 2007-01-20

Abstract

ZnO has recently become a very popular material due to its great potential for
optoelectronics applications. To realize practical application of short-wavelength optoelectronic devices (such as LEDs and LDs) based on ZnO materials, electroluminescence (EL) from ZnO p-n homojunction is pivotal. In this article, ZnO homojunction was grown on single-crystal GaAs (100) substrate by ultrasonic spray pyrolysis with Zn(CH3COO)22H2O as precursor solution. CH3COONH4 and In(NO3)3 aqueous solutions were chosen as the doping sources of nitrogen and indium respectively. The ZnO homojunction was comprised of N-In codoped p-type ZnO and unintentionally doped n-type ZnO film. Ohmic contact layers on n-type ZnO layer and GaAs substrate were formed by Zn/Au and Au/Ge/Ni electrode respectively. Moreover, light emission was observed under forward current injection at room temperature, the emission could be clearly seen by the naked eye in a darkened room. With the demonstrated success of electroluminescence from ZnO p-n homojunction at room temperature, the application of short-wavelength optoelectronic devices based on ZnO materials should be possible in the near future.

Cite this article

BIAN Ji-Ming , LIU Wei-Feng , HU Li-Zhong , LIANG Hong-Wei . Fabrication of ZnO p-n Homojunction by Ultrasonic Spray Pyrolysis and Its Electroluminescence Properties[J]. Journal of Inorganic Materials, 2007 , 22(1) : 173 -175 . DOI: 10.3724/SP.J.1077.2007.00173

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