The structural, optical and electrical properties of AlSb polycrystalline thin films prepared by in co-evaporation vacuum were studied. The results show that the as-deposited AlSb thin films are amorphous phase. And the samples annealed above 540℃ present polycrystalline phases. The degree of transforming amorphous phase into polycrystalline phases depends on the annealing temperature and stoichiometrical composition. When the ratio of Al to Sb is 47.2∶52.8, the films display more obvious polycrystalline phase after annealing at 580℃. Furthermore, some irreversible changes of the conductivity take place in the annealed films during temperature increasing and decreasing processes. During the temperature increasing process, conductance activation energy (Ea) is 0.132eV. During the temperature decreasing process, Ea is 0.044eV from 200℃ to 270℃ and 0.32eV below 200℃. AlSb polycrystalline thin films are pdoping, indirect band semiconductor with absorption coefficient higher than 8×104cm-1. Open circuit voltage of TCO/CdS/AlSb photovoltaic device reaches 200mV.
SONG Hui-Jin
,
HE Jian-Xiong
,
WU Li-Li
,
ZHENG Jia-Gui
,
FENG Liang-Huan
,
LEI Zhi
. Study on AlSb Polycrystalline Thin Films Material[J]. Journal of Inorganic Materials, 2009
, 24(3)
: 517
-520
.
DOI: 10.3724/SP.J.1077.2009.00517
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