Research Paper

Li-doped ZnO Ceramic Target Preparation and RF Magnetron Sputtering ZnO Films

  • CHEN Zhu ,
  • ZHANG Shu-Ren ,
  • DU Shan-Yi ,
  • YANG Cheng-Tao ,
  • ZENG Ze-Yu ,
  • LI Bo ,
  • SUN Ming-Xia
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  • 1. Department of Telecommunication Engineering, Chengdu University of Information Technology, Chengdu 610225, China;
    2. School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China;
    3. Center for Composite Materials. Harbin Institute of Technology, Harbin 150001, China

Received date: 2005-08-01

  Revised date: 2005-09-15

  Online published: 2006-07-20

Abstract

We successfully prepared high quality Li-doped ZnO ceramic targets with 70mm in diameter and 10~15mm in depth by solid-state reactions. The paper studied the influence of different concentration of Li2CO3 on the electrical properties of ZnO ceramic target. By comparing and analyzing the IR( insulative resistivity ) and tgδ(dielectric loss), the optimum concentration of Li2CO3 doped in ZnO ceramic target was obtained(2.2%mol ratio). And the optimum process for preparing ZnO-Li2.2% ceramic target was also realized through the investigation of physics and electrics of ZnO ceramic under the different sintering temperatures and molding pressure treatments. By using Li2.2%-doped ZnO ceramic as the target, the ZnO films with highly c-axis (002) preferred orientation were grown by RF magnetron sputtering on Si(100), glass and Pt(111)/Ti/SiO2/Si(100) substrates respectively.

Cite this article

CHEN Zhu , ZHANG Shu-Ren , DU Shan-Yi , YANG Cheng-Tao , ZENG Ze-Yu , LI Bo , SUN Ming-Xia . Li-doped ZnO Ceramic Target Preparation and RF Magnetron Sputtering ZnO Films
[J]. Journal of Inorganic Materials, 2006
, 21(4) : 1011 -1017 . DOI: 10.3724/SP.J.1077.2006.01011

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