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Journal of Inorganic Materials

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2006 , Vol. 21 >Issue 4: 979 - 985

DOI: https://doi.org/10.3724/SP.J.1077.2006.00979

Research Paper

Characterization and Properties of Si3N4p/Si3N4 Radome Material Prepared by Chemical Vapor Infiltration

  • LIU Yi ,
  • LIU Yong-Sheng ,
  • ZHANG Li-Tong ,
  • CHENG Lai-Fei ,
  • XU Yong-Dong
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  • National Key Laboratory of Thermostructure Composite Materials, Northwestern Polytechnical University, Xi'an 710072, China

Received date: 2005-08-22

  Revised date: 2005-10-31

  Online published: 2006-07-20

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Abstract

normalsize Abstract: Si3N4p/Si3N4 radome material was prepared by chemical vapor infiltration (CVI) with SiCl4-NH3-H2 systems. XRF analysis shows the specimen mainly contains Si, N, O three kinds of elements. XRD patterns indicate the sample consists of α-Si3N4, amorphous deposit, noncrystalline SiO2, small amount of β-Si3N4 and Si. Amorphous deposit can be converted into α-Si3N4 and β-Si3N4 by high temperature heat treatment. SEM photographs show weak bonding and large pores exist among granulae. Maximum flexural strength of the samples is 94MPa, and dielectric constants are between 4.1 and 4.8.

Cite this article

LIU Yi , LIU Yong-Sheng , ZHANG Li-Tong , CHENG Lai-Fei , XU Yong-Dong . Characterization and Properties of Si3N4p/Si3N4 Radome Material Prepared by Chemical Vapor Infiltration[J]. Journal of Inorganic Materials, 2006 , 21(4) : 979 -985 . DOI: 10.3724/SP.J.1077.2006.00979

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