Research Paper

Preparation of Si3N4/SiO2 Composites with Pressureless Sintering

  • XU Chang-Ming ,
  • WANG Shi-Wei ,
  • HUANG Xiao-Xian ,
  • GUO Jing-Kun
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  • 1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai
    200050, China;
    2. Graduate School of Chinese Academy of Sciences, Beijing 100049, China

Received date: 2005-07-20

  Revised date: 2005-11-30

  Online published: 2006-07-20

Abstract

Si3N4/SiO2 composites were prepared with pressureless sintering. It was found that the Si3N4 particle was effective to suppress the crystallization of cristobalite in the Si3N4/SiO2 composites and contributed to the improvement of the mechanical properties. After sintered at 1370℃ for 2h, the flexural strength of the composites with 5vol% Si3N4 addition reached 96.2MPa, the fracture toughness was 2.4MPa·m1/2. The dielectric constant and loss tangent of the composites was 3.63~3.68 and 1.29~1.75×10-3, respectively.

Cite this article

XU Chang-Ming , WANG Shi-Wei , HUANG Xiao-Xian , GUO Jing-Kun . Preparation of Si3N4/SiO2 Composites with Pressureless Sintering[J]. Journal of Inorganic Materials, 2006 , 21(4) : 935 -938 . DOI: 10.3724/SP.J.1077.2006.00935

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