Adv. Search
Journal of Inorganic Materials

Journal of Inorganic Materials >

2006 , Vol. 21 >Issue 3: 513 - 520

DOI: https://doi.org/10.3724/SP.J.1077.2006.00513

Research Paper

Recent Progress in Developing ZnO-based Thin Films of Diluted Magnetic Semiconductors

  • LIU Xue-Chao ,
  • SHI Er-Wei ,
  • ZHANG Hua-Wei ,
  • SONG Li-Xin ,
  • CHEN Zhi-Zhan
Expand
  • 1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;
    2. Graduate School of the Chinese Academy of Sciences, Beijing 100049, China

Received date: 2005-05-28

  Revised date: 2005-10-10

  Online published: 2006-05-20

Fold

Abstract

Diluted magnetic semiconductors (DMSs) are expected to play an important role in interdisciplinary materials science and future spintronics because charge and spin of electrons are accommodated into single matter resulting in interesting magnetic, magneto-optical, magneto-electric and other properties. In this paper, the recent progress in developing ZnO-based DMSs was reviewed, the hot research and existing problems were evaluated, much better analysis was proposed, and some potential use of DMSs was also presented.

Key words： ZnO; diluted magnetic semiconductors (DMSs); transition metals (TM); spintronic devices

Cite this article

LIU Xue-Chao , SHI Er-Wei , ZHANG Hua-Wei , SONG Li-Xin , CHEN Zhi-Zhan . Recent Progress in Developing ZnO-based Thin Films of Diluted Magnetic Semiconductors[J]. Journal of Inorganic Materials, 2006 , 21(3) : 513 -520 . DOI: 10.3724/SP.J.1077.2006.00513

References

1 Ohno H. Science, 1998, 281: 951-956.
2 Fukumrua T, Jin Z W, Ohtomo A, et al. Appl. Phys. Lett., 1999, 75: 3366-3368.
3 Sharma P, Gupta A, Rao K V, et al. Nat. Mater., 2003, 2: 672-677.
4 Wolf S A, Awschalom D D, Buhrman R A, et al. Science, 2001, 294: 1488-1495.
5 Ohno H, Munekata H, Penneys T. Phys. Rev. Lett., 1992, 68: 2664-2667.
6 Akai H. Phys. Rev. Lett., 1998, 81: 3002-3005.
7 Matsukura F, Ohno H, Shen A, et al. Phys. Rev. B, 1998, 57: 2037-2040.
8 Reed M L, El-Masry N A, Stadelmaier H H, et al. Appl. Phys. Lett., 2001, 79(21): 3473-3475.
9 Dietl T, Ohno H, Matsukura F, et al. Science, 2000, 287: 1019-1022.
10 闫发旺, 梁春广. 半导体情报, 2001, 38(6): 2-7.
11 Mauger A, Godart C. Phys. Rep., 1986, 141: 55-59.
12 Koshihara S, Oiwa A, Hirasawa M, et al. Phys. Rev. Lett., 1997, 78: 4617-4620.
13 Pearton S J, Norton D P, Ip K, et al. Prog. Mater. Sci., 2005, 50: 293-340.
14 Pearton S J, Heo W H, Ivill M, et al. Semicond. Sci. Technol., 2004, 19: R59-R74.
15 Jung S W, An S J, Yi G C. Appl. Phys. Lett., 2002, 80(24): 4561-4563.
16 Kim Y M, Yoon M, Park I W, et al. Solid State Commun., 2004, 129(3): 175-178.
17 Blythe H J, Ibrahim R M, Gehring G A, et al. J. Magn. Magn. Mater., 2004, 283: 117-127.
18 Cheng X M, Chien C L. J. Appl. Phys., 2003, 93(10): 7876-7878.
19 Prellier W, Fouchet A, Mercey B, et al. Appl. Phys. Lett., 2003, 82(20): 3490-3492.
20 Lee H J, Jeong S Y. Appl. Phys. Lett., 2002, 81(21): 4020-4022.
21 Ueda K, Tabata H, Kawai K. Appl. Phys. Lett., 2001, 79(7): 988-990.
22 Kim J H, Dojin K, Young E I. J. Appl. Phys., 2002, 92(10): 6066-6071.
23 Hong N H, Sakai J, Hassini A. J. Appl. Phys., 2005, 97(10): 10D312-10D314.
24 Spaldin N A. Phys. Rev. B, 2004, 69: 125201-125207.
25 Wakano T, Fujimura N, Morinaga Y, et al. Pyhsica C, 2001, 10: 260-264.
26 Ishida Y, Hwang J I, Kobayashi M, et al. Physica B, 2004, 351: 304-306.
27 Han S J, Song J W, Yang C H, et al. Appl. Phys. Lett., 2002, 81(22): 4212-4214.
28 Ahn G Y, Park S I, Shim I B, et al. J. Magn. Magn. Mater., 2004, 282: 166-169.
29 Rode K, Anane A, Mattana R, et al. J. Appl. Phys., 2003, 93(10): 7676-7678.
30 Sato K, Yoshida H K. Jpn. J. Appl. Phys., 2001, 40: 334--336.
31 Kanai Y. Jpn. J. Appl. Phys., 1990, 29(8): 1426-1430.
32 Park J H, Kim M G, Jang H M, et al. Appl. Phys. Lett., 2004, 84(8): 1338-1340.
33 Ando K, Sito H, Koinuma H, et al. J. Appl. Phys., 2001, 89(11): 7284-7286.
34 Sato K, Katayama Yoshida. Mater. Res. Soc. Symp. Proc., 2001, 666: F4.6.1- F4.6.10.
35 Fukumura T, Lin Z, Kawasaki M, et al. Appl. Phys. Lett., 2001, 78: 958-960.
36 Tiwari A, Jin C, Kvit A, et al. Solid State Commun., 2002, 121: 371-374.
37 Hong N H, Brize V, Sakai J. Appl. Phys. Lett., 2005, 86(8): 082505-082507.
38 Lawes G, Risbud A S, Ramirez A P, et al. Phys. Rev. B, 2005, 71(4): 045201-0405205.
39 Lee S J, Lee H S, Kim D Y, et al. J. Cryst. Growth, 2006, 286: 223-227.
40 Liu C, Yun, F, Xioa B, et al. J. Appl. Phys., 2005, 97(12): 126107-126109.
41 Diaconu M, Schmidt H, Hochmuth H, et al. Thin Solid Films, 2005, 486: 171-121.
42 Norton D P, Pearton S J, Hebard A F, et al. Appl. Phys. Lett., 2003, 82(2): 239-241.
43 Antony J, Pendyala A, Sharma A, et al. J. Appl. Phys., 2005, 97(10): 10D307-10D309.
44 Yang S G, Pakhomov A B, Hung S T, et al. IEEE Trans. Magn., 2002, 38(5): 2877-2879.
45 Marcel H F, Kawazoe Y, Sharma P, et al. Phys. Rev. Lett. 2005, 94(18): 187204-187207.
46 Cho Y M, Choo W K, Kim H, et al. Appl. Phys. Lett., 2002, 80(18): 3358-3360.
47 Robert B K, Pakhomov A B. J. Appl. Phys., 2005, 97(10): 10D310-10D312.
48 Saeki H, Tabata H, Kawai T. Solid State Commun., 2001, 120(11): 439-443.
Options
Outlines

/

〈 〉