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Journal of Inorganic Materials

Journal of Inorganic Materials >

2006 , Vol. 21 >Issue 2: 381 - 386

DOI: https://doi.org/10.3724/SP.J.1077.2006.00381

Research Paper

Effects of Doped Pr6O11 on the Properties of ZnO-Bi2O3 System Varistors

  • ZHU Jian-Feng ,
  • LUO Hong-Jie ,
  • WANG Fen
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  • 1. Shaanxi University of Science \& Technology, Xianyang 712081, China;
    2. Xi'an Jiaotong University, Xi'an 710049, China;
    3. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China

Received date: 2005-02-24

  Revised date: 2005-06-02

  Online published: 2006-03-20

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Abstract

The ZnO-Bi2O3 system varistors were modified by doping with rare-earth oxide Pr6O11 and their electrical properties and microstructure were investigated. The results of experiment indicate that adding a small scale of Pr6O11 would increase the nonlinear coefficient greatly and decrease the leakage current with no change in threshold voltage. When the Pr6O11 content reaches to 7wt%, the threshold voltage increases by about 60%, whereas the leakage current and nonlinear coefficient are unchangable. The SEM and XRD analyses testify that Pr6O11 makes the microstructure of the materials more uniform and compact.

Key words： rare-earth oxide; varistors materials; electrical properties; microstructure

Cite this article

ZHU Jian-Feng , LUO Hong-Jie , WANG Fen . Effects of Doped Pr6O11 on the Properties of ZnO-Bi2O3 System Varistors[J]. Journal of Inorganic Materials, 2006 , 21(2) : 381 -386 . DOI: 10.3724/SP.J.1077.2006.00381

References

1 Clarke D R. Varistor Ceramics. Journal of the American Ceramics Society, 1999, 82 (3): 485--501.
2 Matsuoka M. Jpn. J. Appl. Phys., 1971, 10 (6): 736--746.
3 Wu Weihan, He Jinliang, Gao Yuming. The Property and Application of Nonlinearity Metal Oxide. Beijin: Qinghua University Press, 1999.
4 Lu Chung-Hsin, Ning Chyi, Wong His-Wu. Materials Chemistry and Physics, 2000, 62: 164--168.
5 Nahm Choon-Woo. Materials Chemistry and Physics, 2003, 80: 746--751.
6 Naoki Wakiya, Chun Sung-Yong, Kazuo Shinozaki, et al. Journal of Solid State Chemistry, 2000, 149: 349--353.
7 MoYihao, Li Biaorong, Zhou Guoliang. Semiconductor Ceramics and Component. Shanghai: Shanghai Technology Press, 1983.
8 Metz R, Delalu H, Vignalou J R. Materials Chemistry and Physics, 2003, 63: 157--162.
9 Zhu Jianfeng, Luo Hongjie, Wangfen. Journal of Shaanxi University of Science & Technology, 2004, 22 (5): 100--105.
10 Nguyen The Hung, Nguyen Dinh Quang, et al. J. Mater. Res., 2001, 16 (10): 2817--2823.
11 Brankovic Z, Branovic G, Poleti D, et al. Ceramics international, 2001, 27: 115--122.
12 Cerva H, Russwurm W. J. Am. Ceram. Soc., 1988, 71 (7): 522--529.
13 Zhou Dongxiang, Zhang Xuli, Li Biaorong, et al. Semiconductors Ceramics and Application. Wu Han: Huazhong University of Science \& Technology Press, 1991.
14 Leach C. International Journal of Inorganic Material, 2001, 3: 1117--1119.
15 Eda K, Iga A, Matsuoka M. Japanese Journal of Applied Physics, 1979, 18 (5): 997--998.
16 Henning D F K, Hartung R, Reijnen P J L. Jam Ceram Soc., 1990, 73 (3): 645--648.
17 Gupta T K, Carlson W G, Hower P L. Journal of Applied Physics, 1981, 52 (6): 4104--4111.
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