Adv. Search
Journal of Inorganic Materials

Journal of Inorganic Materials >

2010 , Vol. 25 >Issue 6: 569 - 572

DOI: https://doi.org/10.3724/SP.J.1077.2010.00569

Research Paper

Microstructure of ZrNiSn-base Half-Heusler Thermoelectric Materials Prepared by Melt-spinning

  • YU Cui ,
  • ZHU Tie-Jun ,
  • XIAO Kai ,
  • JIN Ji ,
  • SHEN Jun-Jie ,
  • YANG Sheng-Hui ,
  • ZHAO Xin-Bing
Expand
  • (State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China)

Received date: 2009-10-14

  Revised date: 2009-12-24

  Online published: 2010-05-12

Fold

Abstract

Thermoelectric materials Zr(Hf)NiSn(Sb) alloys were prepared by levitation melting followed by melt- spinning to refine the microstructure, and then consolidated by spark plasma sintering for the property measurements. XRD analysis showed that the half-Heusler phases were obtained. The microstructures of the melt spun thin ribbons were studied by the scanning electron microscope and transmission electron microscope. The thin ribbons were in the size of a few hundreds nanometers which didn’t grow too much during the sintering process. Nanocrystals were found in the crystal grains. The carrier concentration increased for the melt-spinning samples compared with the levitation melting samples, indicating that the nanocrystals were metallic. The increasing boundary scattering after melt-spinning made the lattice thermal conductivity decrease.

Key words： ZrNiSn; rapid solidification; grain sizes; microstructure

Cite this article

YU Cui , ZHU Tie-Jun , XIAO Kai , JIN Ji , SHEN Jun-Jie , YANG Sheng-Hui , ZHAO Xin-Bing . Microstructure of ZrNiSn-base Half-Heusler Thermoelectric Materials Prepared by Melt-spinning[J]. Journal of Inorganic Materials, 2010 , 25(6) : 569 -572 . DOI: 10.3724/SP.J.1077.2010.00569

References

[1] Uher C, Yang J, Hu S, et al. Transport properties of pure and doped MNiSn (M=Zr, Hf). Phys. Rev. B, 1999, 59(13): 8615-8621.

[2]Aliev F G, Kozyrkov V V, Moshchalkov V V, et al. Narrow band in the intermetallic compounds MNiSn (M = Ti, Zr, Hf). Z. Phys. B,90, 80(3): 353-357.

[3] Hohl H, Ramirez A P, Goldmann C, et al. Efficient dopants for ZrNiSn-based thermoelectric materials. J. Phys. Condens. Matter., 1999, 11(7): 1697-1709.

[4] Bhattacharya S, Tritt M T, Xia Y, et al. Grain structure effects on the lattice thermal conductivity of Ti-based half-Heusler alloys. Appl. Phys. Lett., 2002, 81: 43-45.

[5] Bhattacharya S, Skove M J, Russell M, et al. Effect of boundary scattering on the thermal conductivity of TiNiSn-based half-Heusler alloys. Phys. Rev. B, 2008, 77(18): 184203-1-8.

[6] Sharp J W, Poon S J, Goldsmid H J. Boundary scattering and the thermoelectric figure of merit. Phys. Stat. Sol. (a), 2001, 187(2): 507-516.

[7]刘海强, 唐新峰, 王 焜, 等(LIU Hai-Qiang, et al). Ti1-x(Hf0.919Zr0.081)xNiSn的制备及热电性能. 物理学报(Acta Physica Sinica), 2006, 55(4): 2003-2007.

[8]Hasaka M, Morimura T, Sato H, et al. Thermoelectric properties of Tix(HfyZr1-y)1-xNiSn0.998Sb0.002 half-Heusler ribbons. J. Electron. Mater., 2009, 38(7): 1320-1325.

[9]Morimurat T, Hasaka M, Yoshida S, et al. Microstructures and thermoelectric properties of an annealed Ti0.5(Hf0.5Zr0.5)0.5NiSn0.998Sb0.002 ribbon. J. Electron. Mater., 2009, 38(7): 1154-1158.

[10]Yu C, Zhu T J, Xiao K, et al. Reduced grain size and improved thermoelectric properties of melt spun (Hf, Zr)NiSn half-Heusler alloys. J. Electron. Mater., 2009, DOI: 10.1007/s11664-009-1032-8.

[11] Yu C, Zhu T J, Shi R Z, et al. High-performance half-Heusler thermoelectric materials Hf1-xZrxNiSn1-ySby prepared by levitation melting and spark plasma sintering. Acta Materialia, 2009, 57(9): 2757-2764.

[12]Nolas G S, Sharp J W, Goldsmid H J. Thermoelectrics: Basic Principles and New Materials Developments. Heidelberg, Germany: Springer, 2001: 76-83.
Options
Outlines

/

〈 〉