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Journal of Inorganic Materials

Journal of Inorganic Materials >

2010 , Vol. 25 >Issue 5: 468 - 472

DOI: https://doi.org/10.3724/SP.J.1077.2010.00468

Research Paper

Structure and Dielectric Properties of HfO2 Thin Films

  • CHENG Hua-Rui-1 ,
  • CU Ze-Meng-2 ,
  • 3 ,
  • ZHANG Guo-Bin-2 ,
  • 3 ,
  • LI Ting-Ting-2 ,
  • 3 ,
  • HE Bo-2 ,
  • 3 ,
  • YIN Min-1
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  • 1. Department of Physics, University of Science and Technology of China, Hefei 230026, China; 2. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029， China; 3. School of Nuclear Science and Technology, University of Science and Technology of China, Hefei 230029, China

Received date: 2009-09-10

  Revised date: 2009-11-20

  Online published: 2010-05-12

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Abstract

HfO2 dielectric thin films were deposited on Si(100) substrate by pulsed laser deposition (PLD) method. The structure of films was characterized by X-ray diffraction (XRD) and extended X-ray absorption fine structure spectroscope (EXAFS). The phonons modes and dielectric properties were investigated by far infrared spectroscope. These results show that the thin films deposited at room temperature and 400℃ are amorphous and monoclinic phase, respectively. The crystallization quality of the film is improved after annealing at 1000℃. The HfO2 thin film has shorter Hf--O bonding length and higher disorder than those of HfO2  powder. Some far infrared phonon modes disappear due to the higher disorder and worse crystalline quality of thin film, which causes the dielectric constant of thin film smaller than that of powder sample. However, main infrared phonon modes are preserved and the crystallized thin film still has enough value of dielectric

Key words： HfO2 films; high dielectric gate; pulsed laser deposition; phonon

Cite this article

CHENG Hua-Rui-1 , CU Ze-Meng-2 , 3 , ZHANG Guo-Bin-2 , 3 , LI Ting-Ting-2 , 3 , HE Bo-2 , 3 , YIN Min-1 . Structure and Dielectric Properties of HfO2 Thin Films[J]. Journal of Inorganic Materials, 2010 , 25(5) : 468 -472 . DOI: 10.3724/SP.J.1077.2010.00468

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