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Journal of Inorganic Materials

Journal of Inorganic Materials >

2010 , Vol. 15 >Issue 2: 157 - 162

DOI: https://doi.org/10.3724/SP.J.1077.2010.00157

Research Paper

Electrical Properties and Kinetic of Crystalline Grain Growth of Low-voltage ZnO Varistor Doped with Zn-B Glass

  • WAN Shuai ,
  • Lv Wen-Zhong
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  • (Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China)

Received date: 2009-06-09

  Revised date: 2009-09-09

  Online published: 2010-02-20

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Abstract

The effects of Zn-B glass additive on microstructure and electrical properties of low-voltage ZnO varistor were studied. The results show that ZnO varistor with x=0.1wt% obtains the optimal nonlinear electrical properties: E1mA=36.7V/mm, α=30.4, IL=0.1μA. The grain growth mechanism of low-voltage ZnO varistor doped with Zn-B glass is also investigated in terms of the phenomenological kinetic of crystalline grain growth. Based on the theory, the grain growth kinetic exponent n and apparent activation energy Q are calculated as 4.54 and 316.5kJ/mol for ZnO ceramics varistor sintered at the temperature below 1000℃. The grain growth mechanism is that non-melting Zn-B glass pins the ZnO grain boundaries, which inhibits the grain growth of ZnO varistor. However, n and Q value are 2.92 and 187kJ/mol at the temperature higher than 1000℃. It indicates that melting Zn-B glass wetting the ZnO grain boundaries creates a liquid phase sintering mechanism, which accelerates the grain growth of ZnO varistor.

Key words： Zn-B glass; varistor; electrical properties; kinetic exponent; apparent activation energy

Cite this article

WAN Shuai , Lv Wen-Zhong . Electrical Properties and Kinetic of Crystalline Grain Growth of Low-voltage ZnO Varistor Doped with Zn-B Glass
[J]. Journal of Inorganic Materials, 2010 , 15(2) : 157 -162 . DOI: 10.3724/SP.J.1077.2010.00157

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