Research Paper

Investigation of Structural and Physical Properties of Pt/Pb(Zr 0.4 Ti 0.6 )O3/ITO Capacitors Fabricated on Glass Substrate

  • ZHOU Yang ,
  • CHENG Chun-Sheng ,
  • ZHAO Jing-Wei ,
  • ZHENG Hong-Fang ,
  • ZHAO Qing-Xun ,
  • PENG Ying-Cai ,
  • LIU Bao-Ting
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  • 1. College of Physics Science and Technology,Hebei University, Baoding 071002, China; 2. Baoding University, Baoding 071000, China; 3. College of Electronic and Information Engineering, Hebei University, Baoding 071002, China

Received date: 2009-07-14

  Revised date: 2009-10-15

  Online published: 2010-03-20

Abstract

Pt/Pb(Zr0.4Ti0.6)O3 (PZT)/ITO capacitors were fabricated on glass substrate, where PZT film was prepared by solgel method. The structural and physical properties of Pt/PZT/ITO capacitors were investigated. The microstructural, electrical and optical properties of Pt/PZT/ITO capacitors were characterized by Xray diffraction (XRD), ferroelectric tester, UVspectrophotometer, respectively. It is found that PZT is highly (101) oriented and well crystallized. Ferroelectric measurements indicate that Pt/PZT/ITO capacitor, measured at 5V, possesses good ferroelectric properties, such as fatiguefree characteristics, retention characteristics, large remnant polarization (41.7μC/cm2 ) and high resistivity (2.5×109Ω·cm). The analysis of the leakage current mechanism indicates that Pt/PZT/ITO capacitor showes Ohmiclike behaviour at low voltages (<0.8V) and Schottky emission at high voltages (>0.8V). From the optical measurement, stronger absorption in shortwave and stronger transmission in longwave range are observed. The maximum value of transmission reaches 95%.

Cite this article

ZHOU Yang , CHENG Chun-Sheng , ZHAO Jing-Wei , ZHENG Hong-Fang , ZHAO Qing-Xun , PENG Ying-Cai , LIU Bao-Ting . Investigation of Structural and Physical Properties of Pt/Pb(Zr 0.4 Ti 0.6 )O3/ITO Capacitors Fabricated on Glass Substrate[J]. Journal of Inorganic Materials, 2010 , 25(3) : 242 -246 . DOI: 10.3724/SP.J.1077.2010.00242

References

[1]Muller Ch, Menou N, Barrett R, et al. Nondestructive microstructural diagnostic of integrated ferroelectric capacitor arrays: Correlation with electrical characteristics. J. Appl. Phys., 2006, 99(5): 054504-1-5.

[2]Shim S I, Kim S I, Kim Y T, et al. Operation of single transistor type ferroelectric random access memory. Electron. Lett., 2004, 40(22): 1397-1398.

[3]Lee S H, Esashi M. Characteristics on PZT (Pb(ZrxTi 1-x )O3) films for piezoelectric angular rate sensor. Sensors and Actuators A, 2004, 114(1): 88-92.

[4]Hu S H, Meng X J, Hu G J, et al. Preparation and optical waveguide property of metal alkoxide solutionderived Pb(Zr 0.5-Ti 0. 5)O3 thick films. Appl. Phys. Lett., 2004, 84(18): 3609-3611.

[5]Lee K B, Lee K H, Ju B K. Preparation of Pb(Zr 0. 35 Ti 0. 65 )O3 films on conducting oxide Ga-doped ZnO films for transparent ferroelectric thinfilm transistors. Integrated Ferroelectrics, 2006, 84: 159-168.

[6]Titkov I, Pronin I, Delimova L, et al. Ferroelectric fieldeffect transistor based on transparent oxides. Thin Solid Film, 2007, 515(24): 8748-8751.

[7]Peng D L, Jiang S R, Xie L. Study on the gas-sensitive effect of CdIn2O4 thin films. Physica Status Solidi (a), 1993, 136(2): 441-446.

[8]Kim H M, Ahn J S, Lee K H, et al. Optimized ferroelectric PZT films deposited on various transparent conducting oxides for ferroelectric transparent thinfilm transistors. J. Korean Phys. Soc., 2007, 50(6): 1740-1744.

[9]Liu B T, Cheng C S, Li F, et al. Ni-Al diffusion barrier layer for integrating ferroelectric capacitors on Si. Appl. Phys. Lett., 2006, 88(25): 252903-1-3.

[10]Liu B T, Yan X B, Zhang X, et al. Barrier performance of ultrathin Ni-Ti film for integrating ferroelectric capacitors on Si. Appl. Phys. Lett., 2007, 91(14): 142908-1-3.

[11]Pintilie L, Vrejoiu I, Hesse D, et al. Polarization fatigue and frequencydependent recovery in Pb(Zr, Ti)O3 epitaxial thin films with SrRuO3 electrodes. Appl. Phys. Lett., 2006, 88(10): 102908-1-3.

[12]Zafar S, Jones R E, Jiang B, et al. Oxygen vacancy mobility determined from current measurements in thin Ba 0.5 Sr 0.5 TiO3 films. Appl. Phys. Lett., 1998, 73(2): 175-177.

[13]Scott J F, Dawber M. Oxygenvacancy ordering as a fatigue mechanism in perovskite ferroelectrics. Appl. Phys. Lett., 2000, 76(25): 3801-3803.

[14]Chen Y, Mclntyre P C. Effects of chemical stability of platinum/lead zirconate titanate and iridium oxide/lead zirconate titanate interfaces on ferroelectric thin film switching reliability. Appl. Phys. Lett., 2007, 91(23): 232906-1-3.

[15]Lou X J, Zhang M, Redfen S A T, et al. Local phase decomposition as a cause of polarization fatigue in ferroelectric thin films. Phys. Rev. Lett., 2006, 97(17): 17760-1-4.

[16]Zubko P, Jung D J, Scott J F. Electrical characterization of PbZr 0.4Ti 0.6 O3 capacitors. J. Appl. Phys., 2006, 100(11): 114113-1-7.

[17]Shin J C, Hwang C S, Kim H J, et al. Leakage current of sol-gel derived Pb(Zr, Ti)O3 thin films having Pt electrodes. Appl. Phys. Lett., 1999, 75(21): 3411-3413.

[18]Pham M T N, Boukamp B A, Bouwmeester H J M, et al. Microstructural and electrical properties of nanocomposite PZT/Pt thin films made by pulsed laser deposition. Ceramics International, 2004, 30(7): 1499-1503.

[19]Chopra S, Sharma S, Goel T C, et al. Electrical and optical properties of sol-gel derived Ca-modified PbTiO3 thin films. Materials Chemistry and Physics, 2005, 91(1): 161-165.

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