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Journal of Inorganic Materials

Journal of Inorganic Materials >

2009 , Vol. 24 >Issue 6: 1105 - 1109

DOI: https://doi.org/10.3724/SP.J.1077.2009.01105

Research Paper

Preparation and Photoluminescence Properties of Tb3+-doped Al2O3 Films on Silicon Substrates

  • SHI Tao ,
  • ZHOU Jian ,
  • SHEN Qian-Hong ,
  • YANG Hui
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  • (1. Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China; 2. School of Science, Zhejiang Forest University, Lin’an 311300, China)

Received date: 2009-03-11

  Revised date: 2009-06-19

  Online published: 2010-04-22

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Abstract

Tb3+-doped Al2O3 films on silicon substrates were prepared by the sol-gel method. The Tb3+-doped Al2O3 films were characterized by differential thermal analysis/thermogravimetric analysis, X-ray diffraction, scanning electron microscope, atomic force microscope and photoluminescence spectra as well. The photoluminescence mechanism of Tb3+-doped Al2O3 films was analyzed. The effects of heat-treatment temperature and Tb3+ ion concentration on the luminescence property of Tb3+∶Al2O3 films were discussed. The results show that the prepared Al2O3∶Tb3+ film has high luminescence intensity, the optimum excitation wavelength is 240nm, the optimum concentration of Tb3+ dopant is 5mol%, and the main emission is at 544nm under excitation at 240nm. And the prepared Al2O3∶Tb3+ film has a dense, smooth and crack-free surface texture with a roughness of less than 1.3nm. It is suggested that the film is good enough for fabrication and application of silicon based photoelectronic devices.

Key words： sol-gel; Al2O3∶Tb3+; film; photoluminescence

Cite this article

SHI Tao , ZHOU Jian , SHEN Qian-Hong , YANG Hui . Preparation and Photoluminescence Properties of Tb3+-doped Al2O3 Films on Silicon Substrates[J]. Journal of Inorganic Materials, 2009 , 24(6) : 1105 -1109 . DOI: 10.3724/SP.J.1077.2009.01105

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