C3N6H6(H3 BO3)2 precursor was synthesized with C3N6H6 and H3BO3 as raw materials in aqueous solution, which was followed by pyrolysis at high temperature in flowing N2 atmosphere to prepare (boron and nitrogen)-rich BCN compounds. The pyrolysis products were characterized by FTIR, XRD, XPS, SEM and HRTEM. The room-temperature photoluminescence(PL) spectra of the pyrolysis products were measured by fluorescence spectrometry. Effect of pyrolysis temperature on the pyrolysis products and their photoluminescence were investigated. The results indicate that (boron and nitrogen)-rich BCN compounds with turbostratic graphite structure can be obtained when the pyrolysis temperature is above 1000℃. With the increase of pyrolysis temperature, the contents of B and N in the BCN compounds increase whereas the content of C decreases. These BCN compounds show bar-like or fibrous morphologies similar to the precursor. HRTEM analysis reveals that these BCN compounds are composed of interweaved nanofibers with average diameter of ca.2nm. PL results indicate that these BCN compounds are semiconductors with two strong and broad PL peaks centered at 340-450nm and 670-705nm. With the increase of pyrolysis temperature, the wavelength of the peak centered in the shorter wavelength range decreases due to the variation of the chemical composition.
YANG Jian
,
QIU Tai
,
SHEN Chun-Ying
,
PAN Li-Mei
. Photoluminescence of (Boron and Nitrogen)-rich BCN Compounds Pyrolysed from Precursor[J]. Journal of Inorganic Materials, 2009
, 24(1)
: 13
-17
.
DOI: 10.3724/SP.J.1077.2009.00013
1]Kawaguchi M. Advanced Materials, 1997, 9(8): 615-625.
[2]Yin L W, Bando Y, Golberg D, et al. Journal of the American Chemical Society, 2005, 127(47): 16354-16355.
[3]Kawaguchi M, Kawashima T, Nakajima T. Chemistry of Materials, 1996, 8(6): 1197-1021.
[4]Sauter D, Weinmann M, Berger F, et al. Chemistry of Materials, 2002, 14(7): 2859-2870.
[5]Hegemann D, Riedel R, Oehr C. Thin Solid Films, 1999, 339(1-2): 154-159.
[6]Kim D H, Byon E, Lee S, et al. Thin Solid Films, 2004, 447-448: 192-196.
[7]Knittle E, Kaner R B, Jeanloz R, et al. Physical Review B (Condensed Matter), 1995, 51(18): 12149-12156. [8]白锁柱, 姚 斌, 黄保坤, 等. 高等学校化学学报, 2005, 26(5): 811-815.
[9]Kawaguchi M, Nozaki K, Kita Y, et al. Journal of Materials Science, 1991, 26(14): 3926-3930.
[10]Watanabe M O, Itoh S, Sasaki T, et al. Physical Review Letters, 1996, 77(1): 187-189.
[11]Cao Z X, Liu L M, Oechsner H. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 2002, 20(6): 2275-2280.
[12]Tian Y J, He J L, Yu D L, et al. Radiation Effects and Defects in Solids, 2002, 157(1-2): 245-251.
[13]Bai X D, Wang E G, Yu J. Applied Physics Letters, 2000, 77(1): 67-69.
[14]Terrones M, Golberg D, Grobert N, et al. Advanced Materials, 2003, 15(22): 1899-1903.
[15]Bill J, Aldinger F. Advanced Materials, 1995, 7(9): 775-787.
[16]Hubacek M, Sato T. Journal of Solid State Chemistry, 1995, 114(1): 258-264.
[17]Zhou Z F, Bello I, Lei M K, et al. Surface and Coatings Technology, 2000, 128-129: 334-340.
[18]Linss V, Rodil S E, Reinke P, et al. Thin Solid Films, 2004, 467(1-2): 76-87.
[19]Wada Y, Yap Y K, Yoshimura M, et al. Diamond and Related Materials, 2000, 9(3): 620-624.
[20]Ling H, Wu J D, Sun J, et al. Diamond and Related Materials, 2002, 11(9): 1623-1628.
[21]Etou Y, Tai T, Sugiyama T, et al. Diamond and Related Materials, 2002, 11(3-6): 985-988.
[22]Perrone A, Caricato A P, Luches A, et al. Applied Surface Science, 1998, 133(4): 239-242.
[23]Laidani N, Anderle M, Canteri R, et al. Applied Surface Science, 2000, 157(3): 135-144.
[24]Liu A Y, Wentzovitch R M, Cohen M L. Physical Review B (Condensed Matter), 1989, 39(3): 1760-1765.
[25]Bourgeois L N, Bursill L A. Philosophical Magazine A: Physics of Condensed Matter, Defects and Mechanical Properties, 1997, 76(4): 753-768.