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Journal of Inorganic Materials

Journal of Inorganic Materials >

2008 , Vol. 23 >Issue 6: 1111 - 1114

DOI: https://doi.org/10.3724/SP.J.1077.2008.01111

Research Paper

Laser Induced Change in the Electrical and Optical Properties of Amorphous Ge2Sb2Te5 Thin Films

  • SUN Hua-Jun ,
  • HOU Li-Song ,
  • WU Yi-Qun ,
  • WEI Jing-Song
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  • Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

Received date: 2008-02-20

  Revised date: 2008-06-04

  Online published: 2008-11-20

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Abstract

Sheet resistance of laser-irradiated amorphous Ge2Sb2Te5 thin films prepared by magnetron sputtering were measured by the four-point probe method. With the laser power increasing, the sheet resistance undergoes an abrupt change of four orders of magnitude (107-103Ω/□) at about 580mW. X-ray diffraction studies of the three samples before, at and after the abruption point reveal the phase change process of the Ge2Sb2Te5 thin films from amorphous to crystal states. Optical constants of the three samples measured by ellipsometry have relations as follows, namorphous>nintermediate>ncrystalline, kcrystalline>kintermediate>kamorphous, αcrystalline>αintermediate>αamorphous. Based on the above results, the relationship between the electrical/optical properties and the structural state of the Ge2Sb2Te5 thin films is discussed.

Key words： Ge2Sb2Te5 film; laser-irradiation; electrical/optical properties; optical constants; phase change

Cite this article

SUN Hua-Jun , HOU Li-Song , WU Yi-Qun , WEI Jing-Song . Laser Induced Change in the Electrical and Optical Properties of Amorphous Ge2Sb2Te5 Thin Films[J]. Journal of Inorganic Materials, 2008 , 23(6) : 1111 -1114 . DOI: 10.3724/SP.J.1077.2008.01111

References

[1] Ovshinsky S R. Phys Rev. Lett., 1968, 21 (20): 1450--1453.
[2] Ohta T J. Optoelectron. Adv. Mater., 2001, 3 (3): 609--626.
[3] Kolobov A V. Photo-Induced Metastability in Amorphous Semiconductors, Berlin: Wiley-VCH, 2003. 310--326.
[4] Neale R G, Nelson D L, Moore E. Electronics, 1970, 43 (20): 56--58.
[5] Yamada N, Ohno E, Nishiuchi K, et al. Jpn. J. Appl. Phys., 1991, 69 (5): 2849--2856.
[6] Wicker G. Proc. SPIE-The International Society for Optical Engineering, Washington, 1999, 3891: 2--9.
[7] Neale R. Electronic Engineering(U.K.), 2000, 73 (891): 67--82.
[8] Ovshinsky S R. Jpn. J. Appl. Phys., 2004, 43 (7B): 4695--4699.
[9] Mytilineou E, Ovshinsky S R, Pashmakov B, et al. J. Non-Cryst. Solids, 2006, 352: 1991--1994.
[10] Wuttig M, Lusebrink D, Wamwangi. Nature Mater., 2007, 6: 122--128.
[11] Kolobov A V, Fons P, Frenkel A, et al. Nature Mater., 2004, 3: 703--708.
[12] Welnic W, Detemple R, Steimer C, et al. Nature Mater., 2006, 5: 56--62.
[13] BJ Kooi, WMG Groot, JTM De Hosson. J. Appl. Phys., 2004, 95 (3): 924--932.
[14] Yao H B, Shi L P, Chong T C, et al. IEEE Optical Memory and Optical Data Storage Topical Meeting, HI, USA, 2002. 99--101.
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