Using a reactive radio-frequent magnetron sputtering method, high c-axis oriented ZnO films were deposited on Si (001) and quartz substrates under various oxygen partial pressures with a total pressure of 0.3Pa. Atomic force microscope, X-ray diffraction, UV-Visible transmission spectroscope and photoluminescence (PL) were used to study the effect of oxygen pressure on the surface morphology and optical properties of ZnO films. It is found that the films have three different growth modes in the range of oxygen pressure from 0.04Pa to 0.23Pa. The critical pressures for the transition of film growth can be taken at 0.04--0.08Pa and 0.16--0.19Pa, respectively. When the oxygen pressure is lower than 0.16Pa, the film grown along +c axis. When the oxygen pressure exceeds 0.19Pa, grains along -c axis growth are dominant in the films. With the increase of oxygen pressure, the transmittance, refraction index, optical band gap, and PL intensity increase. At the oxygen pressure of 0.19Pa, the film has a narrowest PL spectrum with a full width at half maximum of 88 meV at room temperature.
LIU Ming
,
WEI Wei
,
QU Sheng-Wei
,
GU Jian-Feng
,
MA Chun-Yu
,
ZHANG Qing-Yu
. Effect of Oxygen Pressure on the Growth Behavior and Optical Properties of ZnO Films[J]. Journal of Inorganic Materials, 2008
, 23(6)
: 1096
-1100
.
DOI: 10.3724/SP.J.1077.2008.01096
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