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Journal of Inorganic Materials

Journal of Inorganic Materials >

2008 , Vol. 23 >Issue 5: 933 - 937

DOI: https://doi.org/10.3724/SP.J.1077.2008.00933

Research Paper

Atomic Scale Simulation of {111}-Oriented SiC Film Growth by Chemical Vapor Deposition Method

  • LIU Cui-Xia ,
  • YANG Yan-Qing ,
  • HUANG Bin ,
  • ZHANG Rong-Jun ,
  • LUO Xian ,
  • REN Xiao-Xia
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  • School of Materials Science and Engineering, State Key Laboratory of Solidification Processing Northwestern Polytechnical University, Xi’an 710072, China

Received date: 2007-10-08

  Revised date: 2007-12-11

  Online published: 2008-09-20

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Abstract

In the process of SiC film fabricated by chemical vapor deposition method, kinetic process of chemical reaction in reaction zone and the deposition and diffusion of matrix surface were studied respectively. With kinetic Monte Carlo method, a three-dimensional atomic-scale of {111}-oriented SiC film is established and its growth process is simulated by MATLAB. The results show that the growth of film has three stages including form of little islets, mergence and expanding of islets and dynamic balance between islets. With the increase of substrate temperature, deposition rate, surface roughness and height of film all increase. When the deposition rate increases, surface roughness increases while relative density decreases. Moreover, the simulation results are in well agreement with the relevant theory and experimental result.

Key words： SiC film; chemical vapor deposition; kinetic monte carlo simulation; surface roughness; relative density

Cite this article

LIU Cui-Xia , YANG Yan-Qing , HUANG Bin , ZHANG Rong-Jun , LUO Xian , REN Xiao-Xia . Atomic Scale Simulation of {111}-Oriented SiC Film Growth by Chemical Vapor Deposition Method[J]. Journal of Inorganic Materials, 2008 , 23(5) : 933 -937 . DOI: 10.3724/SP.J.1077.2008.00933

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