Research Paper

Study on 3C-SiC/Si(111) by X-ray Grazing Incident Diffraction

  • LIU Zhong-Liang ,
  • LIU Jin-Feng ,
  • REN Peng ,
  • LI Rui-Peng ,
  • XU Peng-Shou ,
  • PAN Guo-Qiang
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  • National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China

Received date: 2007-10-15

  Revised date: 2007-12-10

  Online published: 2008-09-20

Abstract

Monocrystalline 3C-SiC films were successfully grown on Si(111) substrate at substrate temperature of 1000℃ by molecular beam epitaxy (MBE) using solid-state element C and Si sources. The RHEED results indicate that the film grown on Si(111) substrate is 3C-SiC film with all cubic axes parallel to the substrate. The quality and the strain of the film were investigated by Synchrotron radiation X-ray grazing incident diffraction method (GID) combining X-ray diffraction (XRD). The result shows that the film is in the state of biaxial tensile strain. The biaxial tensile strain is attributed to the large lattice and thermal expansion coefficient mismatch between SiC and Si. According to the result of the rocking curves of the film at different grazing incident angles, the quality of the film is better in the zone far from the interface between SiC and Si due to the decrease of the defects in the zone far from the interface. The results of rocking curves of GID and XRD show that the tilt mosaic is bigger than the twist mosaic in the SiC film, which indicat that the lattice array in plane is in better order than that in perpendicular direction.

Key words: XRD; GID; Si; SiC; SSMBE

Cite this article

LIU Zhong-Liang , LIU Jin-Feng , REN Peng , LI Rui-Peng , XU Peng-Shou , PAN Guo-Qiang . Study on 3C-SiC/Si(111) by X-ray Grazing Incident Diffraction[J]. Journal of Inorganic Materials, 2008 , 23(5) : 928 -932 . DOI: 10.3724/SP.J.1077.2008.00928

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