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Journal of Inorganic Materials

Journal of Inorganic Materials >

2008 , Vol. 23 >Issue 5: 865 - 871

DOI: https://doi.org/10.3724/SP.J.1077.2008.00865

Research Paper

Development of High-K Gate Dielectric Materials

  • WU De-Qi ,
  • ZHAO Hong-Sheng ,
  • YAO Jin-Cheng ,
  • ZHANG Dong-Yan ,
  • CHANG Ai-Min
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  • 1. Xinjiang Technical Institute of Physics & Chemistry, Urumqi 830011, China; 2. Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China; 3. Graduate University of the Chinese Academy of Sciences, Beijing 100049, China

Received date: 2007-10-16

  Revised date: 2007-12-14

  Online published: 2008-09-20

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Abstract


The traditional gate dielectric material of SiO2 can not satisfy the need of the continuous downscaling of CMOS dimensions. High-K gate dielectric materials have attracted extensive research efforts recently and obtained great progress. In this paper, the developments of high gate materials were reviewed. Based on the authors background and research work in the area, the latest achievements of high-K gate dielectric materials on the recrystalization temperature, the low-K interface layer, and the dielectric breakdown and metal gate electrode were introduced in detail.

Key words： high-K gate dielectrics; recrystallization temperature; lowK interface layer; metal gate

Cite this article

WU De-Qi , ZHAO Hong-Sheng , YAO Jin-Cheng , ZHANG Dong-Yan , CHANG Ai-Min . Development of High-K Gate Dielectric Materials[J]. Journal of Inorganic Materials, 2008 , 23(5) : 865 -871 . DOI: 10.3724/SP.J.1077.2008.00865

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