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Journal of Inorganic Materials

Journal of Inorganic Materials >

2008 , Vol. 23 >Issue 4: 819 - 823

DOI: https://doi.org/10.3724/SP.J.1077.2008.00819

Research Paper

Research on Sintering Stability of Cubic Silicon Nitride Synthesized by Shock-wave

  • YAO Huai ,
  • XU Qiao-Yu ,
  • QI Xin ,
  • TANG Jing-You ,
  • LIU Hai-Yang ,
  • CHANG Qing-Hua
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  • (1. School of Materials Science and Engineering, Henan University of Science and Technology, Luoyang 471003, China; 2. School of Electromechnical Engineering, Henan University of Science and Technology, Luoyang 471003, China; 3. School of Computer Science and Technology, Harbin University of Science and Technology, Harbin 150080, China; 4. School of Materials Science and Engineering, Southwest University of Science and Technology, Mianyang 621010, China)

Received date: 2007-09-05

  Revised date: 2007-11-28

  Online published: 2008-07-20

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Abstract

Silicon nitride ceramics was prepared by super-high pressure using the γ-Si3N4 powders synthesized by the shock-wave technique as raw materials and with Y2O3-Al2O3-La2O3 mixtures as additives at 5.7GPa from 1370K to 1670K. The stability, relative density, mechanical properties and microstructure of the compacts synthesized at different temperatures were investigated. The results show that γ-Si3N4 is completely transformed to β-Si3N4 at temperature from 1420K to 1670K,
and partly transformed to β-Si3N4 at 1370K. Micro-analysis indicates that the typical microstructure of sintered Si3N4 is mainly composed of β-Si3N4 rod crystals with disordered orientation and uniform microstructures. The relative density
and Vickers hardness in the as-sintered (5.7GPa, 1370K) samples are 98.83% and 21.09GPa, respectively.

Key words： shock wave synthesis; high pressure and high temperature; sintering; phase transition; stability

Cite this article

YAO Huai , XU Qiao-Yu , QI Xin , TANG Jing-You , LIU Hai-Yang , CHANG Qing-Hua . Research on Sintering Stability of Cubic Silicon Nitride Synthesized by Shock-wave[J]. Journal of Inorganic Materials, 2008 , 23(4) : 819 -823 . DOI: 10.3724/SP.J.1077.2008.00819

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