High-density SiC ceramics doped with 2wt% Al2O3 additives were fabricated by ultra-high
pressure and high temperature technique (4.5GPa,1250℃,20min). The structures, grain size, lattice parameters, chemical component, morphology and mechanical property of the sintered SiC ceramics were characterized by X-ray diffraction
(XRD), X-ray photoelectron energy spectroscope (XPS), scanning electron microscope (SEM), energy dispersive X-ray
spectroscope (EDX) and nano impress indenter. The results show that nano-SiC ceramic is fully densified by ultra-high
pressure technique at relative low temperature (1250±50℃). No phase transfer or holes is found in the sintered nano-SiC
ceramic. The hardness and elastic modulus of the sintered SiC ceramic with grain size of 22nm and lattice parameters of 0.4355nm are 33.7GPa and 407GPa, respectively.
XIE Mao-Lin
,
LUO De-Li
,
XIAN Xiao-Bin
,
LENG Bang-Yi
,
XIE Dong-Hua
,
LU Wei-Yuan
. Nano-SiC Ceramic Sintering at Ultra-high Pressure and High Temperature[J]. Journal of Inorganic Materials, 2008
, 23(4)
: 811
-814
.
DOI: 10.3724/SP.J.1077.2008.00811
[1] 佘继红. 上海: 中国科学院上海硅酸盐研究所博士论文, 1999.
[2] Gary L. Harris. Properties of silicon carbide. London, UK: the Institution of Electrical Engineers. 1995. [3] 佘继红, 江东亮, 谭寿洪, 等. 硅酸盐学报, 1997, 25 (4): 395--400.
[4] Vassen R, Kaiser A, Stover D. J. Am. Ceram. Soc., 1999, 82 (10): 2585--2593.
[5] 凌云汉, 李江涛, 葛昌纯. 北京科学技术大学学报, 2001, 23 (3): 257--261.
[6] 高濂, 李蔚, 王宏志, 等(GAO Lian, et al). 无机材料学报(Journal of Inorganic Materials), 2000, 15 (6): 1005--1008.
[7] 李丹, 卢忠远, 藤元成, 等. 山东陶瓷, 2003, 26 (5): 9--12
[8] Balog M, Sajgalik P, Hnatko M, et al. Journal of the European Ceramic Society, 2007, 27 (5): 2145--2152.
[9] Vassen R, Stover D. Materials Science and Enginnering A, 2001, 301 (1): 59--68.
[10] Jin H Y, Ishiyama M, Qiao G J, et al. Materials Science & Enginneering A, 2007, DOI:10.1016/j.msea.2006.09.134.
