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Journal of Inorganic Materials

Journal of Inorganic Materials >

2008 , Vol. 23 >Issue 4: 749 - 752

DOI: https://doi.org/10.3724/SP.J.1077.2008.00749

Research Paper

Effect of Annealing Temperature on the Microstructure and Scintillation Properties of CsI(Tl) Films

  • CHENG Feng ,
  • ZHONG Yu-Rong ,
  • WANG Bao-Yi ,
  • WANG Tian-Min ,
  • WEI Long
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  • 1. School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China; 2. Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China; 3. School of Science, Beijing University of Aeronautics and Astronautics, Beijing 100083; China

Received date: 2007-09-04

  Revised date: 2007-11-02

  Online published: 2008-07-20

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Abstract

CsI(Tl) films were prepared by thermal evaporation and annealed at various temperatures. Structure and scintillation properties of the films were examined using X-ray diffraction, scanning electron microscope, X-ray fluorescence spectrometry, positron annihilation lifetime spectroscope and scintillation pulse height spectrometry. Results show that the CsI films are in micro-columnar structure with a preferential (200) orientation. When the sample is annealed at 150℃, Tl+ ions diffuse to the sample surface. Consequently, the amount and size of the vacancy type of defects increase. However, the light yield increases a little after annealed. The samples annealed at 250℃ have a good crystalline state and scintillation properties. As the annealing temperature increases to 400℃, the light output of the samples decreases seriously due to the dramatic change of their microstructure and the decrease of Ti+.

Key words： CsI films; microstructure; scintillation properties

Cite this article

CHENG Feng , ZHONG Yu-Rong , WANG Bao-Yi , WANG Tian-Min , WEI Long . Effect of Annealing Temperature on the Microstructure and Scintillation Properties of CsI(Tl) Films[J]. Journal of Inorganic Materials, 2008 , 23(4) : 749 -752 . DOI: 10.3724/SP.J.1077.2008.00749

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