Research Paper

Effect of Annealing Temperature on Structure and Properties of Pt/SrBi2Ta2O9/Bi4Ti3O12/p-Si Heterostructure

  • REN Ming-Fang ,
  • WANG Hua
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  • Department of Information Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China

Received date: 2007-08-27

  Revised date: 2007-11-15

  Online published: 2008-07-20

Abstract

Pt/SrBi2Ta2O9/Bi4Ti3O12/p-Si heterostructures were fabricated by sol-gel method. The effects of annealing temperature on microstructure, crystal growth behavior, leakage current density, and C-V characteristics of Pt/SrBi2Ta2O9/Bi4Ti3O12/p-Si heterostructure were investigated. The SrBi2Ta2O9/Bi4Ti3O12 multilayer thin films annealed at low temperature are polycrystalline, and grow in the preferred c-axis orientation with the increase of annealing temperature. The C-V curves of Pt/SrBi2Ta2O9/Bi4Ti3O12/p-Si heterostructure annealed at various temperatures all show a clockwise ferroelectric hysteresis loop. The widths of C-V hysteresis loops of Pt/SrBi2Ta2O9/Bi4Ti3O12/p-Si heterostructure increase with the increase of annealing temperature and reach a maximum of 0.78V when the heterostructure is annealed at 700℃. The leakage current density of Pt/SrBi2Ta2O9/Bi4Ti3O12/p-Si heterostructure decrease slowly with the increase of annealing temperature from 550℃ to 650℃. However, when the annealing temperature is above 650℃, the leakage current density of Pt/SrBi2Ta2O9/Bi4Ti3O12/p-Si heterostructure increase evidently. The lowest leakage current density is 2.54×10-7A/cm2 when Pt/SrBi2Ta2O9/Bi4Ti3O12/p-Si heterostructure is annealed at 650℃.

Cite this article

REN Ming-Fang , WANG Hua . Effect of Annealing Temperature on Structure and Properties of Pt/SrBi2Ta2O9/Bi4Ti3O12/p-Si Heterostructure[J]. Journal of Inorganic Materials, 2008 , 23(4) : 700 -704 . DOI: 10.3724/SP.J.1077.2008.00700

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