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Journal of Inorganic Materials

Journal of Inorganic Materials >

2008 , Vol. 23 >Issue 3: 531 - 534

DOI: https://doi.org/10.3724/SP.J.1077.2008.00531

Research Paper

Growth and Structural Properties of Indium doped SrTiO3 Films by Pulsed Laser Deposition

  • ZHANG Yi-Wen ,
  • LI Xiao-Min ,
  • ZHAO Jun-Liang ,
  • YU Wei-Dong ,
  • GAO Xiang-Dong ,
  • WU Feng
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  • (1. State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China; 2. Graduate University of the Chinese Academy of Sciences, Beijing 100049, China)

Received date: 2007-05-25

  Revised date: 2007-07-13

  Online published: 2008-05-20

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Abstract

Undoped and In-doped SrTiO3(STO) films were grown on MgO/TiN/Si(100) substrates by pulsed laser deposition(PLD). The growth mechanism, crystallinity, surface morphology, and UV-Raman spectra of the films were studied. Results indicate that undoped STO films show high quality crystalline structure with highly (200) orientation. With Indium doping, the crystallinity of the STO film deteriorate, the first order Raman peaks increase indicating the breaking of crystal symmetry, and the film growth mode change from the layer-by-layer mode to island-layer mixed one, resulting in the roughening of the film surface. Furthermore, the crystallinity and (200) orientation of In-doped STO film can be enhanced significantly by introducing an undoped STO buffer layer.

Key words： pulsed laser deposition; SrTiO3 film; buffer layer; crystallinity

Cite this article

ZHANG Yi-Wen , LI Xiao-Min , ZHAO Jun-Liang , YU Wei-Dong , GAO Xiang-Dong , WU Feng . Growth and Structural Properties of Indium doped SrTiO3 Films by Pulsed Laser Deposition[J]. Journal of Inorganic Materials, 2008 , 23(3) : 531 -534 . DOI: 10.3724/SP.J.1077.2008.00531

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