The carbon nanotubes (CNTs) film was prepared on Si substrate by electrophoretic deposition (EPD) and treated by Ar microwave plasma. The microstructure and field emission properties of the as-prepared CNTs films before and after treatment were investigated. High-resolution transmission electron microscope (HRTEM) and Raman spectroscope reveal the microstructural changes of CNTs after the plasma treatment as evidence of the appearance of a large amount of structural defects, the sticking with nanometer size and “needle-like” tips. The field emission measurements indicate that the turn on electric field is increased slightly after treatment. The sample treated by Ar plasma for 10min shows the best field emission J-E property. Compared to that of untreated sample, the threshold field of the CNTs film treated for 10min decreases from 3.12V/μm to 2.54V/μm. And after plasma treatment, the emission current density at applied electric field of 3.3V/μm increase from 18.4mA/cm2 to 60.7mA/cm2. The mechanism of variation of field emission properties after plasma treatment is discussed.
QIN Yu-Xiang
,
HU Ming
. Ar Microwave Plasma Treatment of Carbon Nanotubes Film by Electrophoretic Deposition[J]. Journal of Inorganic Materials, 2008
, 23(3)
: 515
-518
.
DOI: 10.3724/SP.J.1077.2008.00515
[1] Sarangi D, Arpaoui I, Bonard J M. Physica B, 2002, 323 (1-4): 165-167.
[2] Jonge N D, Lamy Y, Schoots K, et al. Nature, 2002, 420 (28): 393-395.
[3] de Heer W A, Chatelain A, Ugarte D. Science, 1995, 270 (5239): 1179-1180.
[4] Xie S S, Li W Z, Pan Z W, et al. Journal of Physics and Chemistry of Solids, 2000, 61 (7): 1153-1158.
[5] Choi J H, Choi S H, Han J H, et al. J. Appl. Phys., 2003, 94 (1): 487-490.
[6] Baughman R H, Zakhidov A A, de Heer W A. Science, 2002, 297 (5582): 787-792.
[7] Bonard J M, Kurt R, Klinke C. Chem. Phys. Lett., 2001, 343 (1-2): 21-27.
[8] Baturin A S, Nikolski K N, Knyazev A I. Technical Physics, 2004, 49 (3): 342-344.
[9] Jin F, Liu Y, Day C M, et al. Carbon, 2007, 45 (3): 587-593.
[10] Su C Y, Juang Z Y, Chen Y L, et al. Diamond Relat. Mater., 2007, 16 (4-7): 1393-1397.
[11] Yi W K, Jeong T W, Yu S G, et al. Adv. Mater., 2002, 14 (23): 1464-1468.
[12] Chen Y C, Tsau Y M, Hsieh Y S, et al. Diamond Relat. Mater., 2005, 14 (3-7): 758-762.
[13] Kawashima Y, Katagiri G. Phys. Rev. B, 1999, 59 (1): 62-64.
[14] Kasuya A, Sasaki Y, Saita Y, et al. Phys. Rev. Lett., 1997, 78 (23): 4434-4437.
[15] Li W Z, Zhang H, Wang C Y, et al. Appl. Phys. Lett., 1997, 70 (20): 2684-2686.
[16] Kim W S, Lee J, Jeong T W, et al. Appl. Phys. Lett., 2005, 87 (16): 163112.
[17] Hiura H, Ebessen T W, Fujita J. Nature, 1994, 367 (6453): 148-151.
[18] Obraztsov A N, Volkov A P, Pavlovsky I. Diamond Relat. Mater., 2000, 9 (3-6): 1190-1195.
[19] Obraztsov A N, Pavlovsky I, Volkov A P, et al. J. Vac. Sci. Technol. B, 2000, 18 (2): 1059-1062.
[20] Dean K A, von Allmen P, Chalamala B R, et al. J. Vac. Sci. Technol. B, 1999, 17 (5): 1959-1969.
[21] Zhou G, Duan W, Gu B. Phys. Rev. Lett., 2001, 87 (9): 095504.
