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Journal of Inorganic Materials

Journal of Inorganic Materials >

2008 , Vol. 23 >Issue 2: 369 - 372

DOI: https://doi.org/10.3724/SP.J.1077.2008.00369

Research Paper

Fabrication of Polycrystalline Silicon Films with Columnar Grains Structure on Quartz

  • ZHANG Li-Wei ,
  • ZHOU Ling-Li ,
  • LI Rui ,
  • LI Hong-Ju ,
  • LU Jing-Xiao
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  • 1. Key laboratory of Material Physics of Ministry of Education, Zhengzhou University, Zhengzhou 450052, China; 2 Xinxiang University, Xinxiang 453000, China; 3 Henan University of Technology, Zhengzhou 450001, China

Received date: 2007-02-02

  Revised date: 2007-06-07

  Online published: 2008-03-20

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Abstract

N/I silicon thin films were deposited on amorphous silicon thin film coated quartz substrate by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD)system at low temperature, and subsequently annealed by two-step rapid thermal processing (RTP). Through Raman scattering, X-Ray diffraction (XRD), scanning electron microscope(SEM) and transmittance electron microscope (TEM) measurement, the crystallization and morphologies of the sample were investigated. The results show that the crystallinity of the N/I silicon thin films reaches about 94% after being annealed. The cross sectional morphology of the N/I silicon thin films is of columnar grains and the average grain size of the sample is about 30nm while the biggest grain cluster is about 1.5μm in landscape orientation.

Key words： rapid thermal annealing; columnar grain; poly-Si thin film; poly-Si thin film solar cells

Cite this article

ZHANG Li-Wei , ZHOU Ling-Li , LI Rui , LI Hong-Ju , LU Jing-Xiao . Fabrication of Polycrystalline Silicon Films with Columnar Grains Structure on Quartz[J]. Journal of Inorganic Materials, 2008 , 23(2) : 369 -372 . DOI: 10.3724/SP.J.1077.2008.00369

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