CdZnTe crystal was grown with different In dopant concentration in excess Te atmosphere. The relation between In dopant concentration and resistivity, carrier concentration, mobility of the CdZnTe crystal was investigated. In addition, In-doped compensation mechanism in CdZnTe crystal was also discussed. Results show that the high resistivity of CdZnTe crystal obtained is 1.89×1010Ω· cm when the In dopant concentration is at the level of 5×1017cm-3.
YUAN Zheng
,
SANG Wen-Bin
,
QIAN Yong-Biao
,
LIU Hong-Tao
,
MIN Jia-Hua
,
TENG Jian-Yong
. Effects of In Dopant Concentration on the Electrical Properties of CdZnTe Crystal[J]. Journal of Inorganic Materials, 2008
, 23(1)
: 195
-198
.
DOI: 10.3724/SP.J.1077.2008.00195
[1] Tumay O Tumer, Shi Yin, Cajipea Victoria, et al. Nuclear Instruments and Methods in Physics Research A, 2003, 497 (1): 21--29.
[2] Schlesinger T E, Toney J E, Yoon H, et al. Materials Science and Engineering, 2001, 32 (4--5): 103--189.
[3] Lachish U. Journal of Crystal Growth, 2001, 225 (2--4): 114--117.
[4] Fochuk P, Panchuk O, Feychuk P, et al. Nuclear Instruments and Methods in Physics Research A, 2001, 458 (1--2): 104--112.
[5] Jacob H Greenberg. Journal of Crystal Growth, 1999, 197 (3): 406--412. [6] Cavallini A, Fraboni B. Applied Physics Letters, 2000, 77 (20): 3212--3214.
[7] Muren Chu, Sevag Terterian, David Ting. Applied Physics Letters, 2001, 79 (17): 2728--2730.
[8] Yujie Li, Guoli Ma, Wanqi Jie. Journal of Crystal Growth, 2003, 256 (3--4): 266--275.
[9] Fiederle M, Eiche C, Salk M, et al. Journal of Applied Physics, 1998, 84 (12): 6689--6692.
[10] Seto S, Suzuki K, Abastillas Jr V N, et al. Journal of Crystal Growth, 2000, 214--215: 974--978.
[11] Meyer B K, Stadler W. Journal of Crystal Growth, 1996, 161 (1--4): 119--127.
[12] Li Y J, Ma G L, Jie W Q. Journal of Crystal Growth, 2003, 257 (3--4): 219--224.
[13] 刘恩科, 朱秉升, 罗晋生. 半导体物理学. 西安: 西安交通大学出版社, 1998. 84--99.
