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Journal of Inorganic Materials

Journal of Inorganic Materials >

2007 , Vol. 22 >Issue 6: 1206 - 1210

DOI: https://doi.org/10.3724/SP.J.1077.2007.01206

Research Paper

Thermal Stability of Al-doped ZrO2 Films Prepared by Reactive RF Magnetron Sputtering

  • MA Chun-Yu ,
  • LI Zhi ,
  • ZHANG Qing-Yu
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  • (1. State Key Laboratory of Materials Modification by Laser, Ion and Electron Beam,Dalian University of Technology, Dalian 116024, China; 2. Department of Mechanical Engineering, Dalian University, Dalian 116622, China)

Received date: 2006-12-19

  Revised date: 2007-03-17

  Online published: 2007-11-20

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Abstract

Al-doped ZrO2 films with different microstructures were deposited on Si (100) substrates by using reactive RF magnetron sputtering process with metallic Zr and Al as targets in an argon-oxygen atmosphere. The films were characterized with high-resolution transmission electron microscope (HRTEM), X-ray diffraction (XRD), and atomic force microscope (AFM) to investigate variety of the thermal stability, the interfacial stability and the surface roughness of the films with different annealing temperatures. The influence of the microstructures of Al-doped ZrO2 thin films on their electrical I-V characteristics was also discussed. The results show that the atomic content of Al in films has a significant influence on the microstructures, upon increasing the atomic content ratio of Al/Zr, the structure transition of the films is a-ZrO2 (pure)→t-(Zr,Al)O2 and c-(Zr,Al)O2 (Al/Zr=1/4)→a-(Zr,Al)O2(Al/Zr=4/5). Al-doped ZrO2 thin films with Al/Zr atomic ratio of 4/5 has the increase in the crystallization temperature compared to a pure ZrO2 film, so the thermal stability of the films is improved.

Key words： thin film physics; Al-doped ZrO2 thin film; magnetron sputtering; thermal stability

Cite this article

MA Chun-Yu , LI Zhi , ZHANG Qing-Yu . Thermal Stability of Al-doped ZrO2 Films Prepared by Reactive RF Magnetron Sputtering[J]. Journal of Inorganic Materials, 2007 , 22(6) : 1206 -1210 . DOI: 10.3724/SP.J.1077.2007.01206

References

[1] Wallace R M. Appl. Surf. Sci., 2004, 231-232: 543--551.
[2] Wilk G D, Wallace R M, Anthony J M. J. Appl. Phys., 2001, 89 (10): 5243--5275.
[3] Garner C M, Kloster G, Atwood G, et al. Microelectronics Reliability, 2005, 45 (5-6): 919--924.
[4] Kim J S, MarZouk H A, Reucroft P J. Thin Solid Films, 1995, 254 (1-2): 33--38.
[5] Chen H W, Landheer D, Wu X, et al. J. Vac. Sci. Technol. A., 2002, 20 (3): 1145--1148.
[6] 阎志军, 王印月, 徐闰, 等. 物理学报, 2004, 53: 2771--2775.
[7] Gao P T, Meng L J, Teixeira V, et al. Vacuum, 2000, 56: 143--148.
[8] 卢红亮, 徐敏, 丁士进, 等(LU Hong-Liang, et al). 无机材料学报(Journal of Inorganic Materials), 2006, 20 (5): 1217--1221.
[9] Wilk G D, Wallace R M. Appl. Phys. Lett., 2000, 76 (1): 112--114.
[10] Quevedo-Lopez M A, El-Bouanani M, Gnade B E, et al. J. Appl. Phys., 2002, 92 (7): 3540--3550.
[11] Wilk G D, Wallace R M. Appl. Phys. Lett., 1999, 74 (19): 2854--2856.
[12] Van Dover R B, Green M L, Manchanda L, et al. Appl. Phys. Lett., 2003, 83 (7): 1459--1461.
[13] Van Dover R B, Lang D V, Green M L, et al. J. Vac. Sci. Technol. A., 2001, 19 (6): 2775--2779.
[14] Kundu M, Miyata N, Ichikawa M. J. Appl. Phys., 2003, 93 (3): 1498--1504.
[15] Gao K Y, Seyller Th, Ley L, et al. Appl. Phys. Lett., 2003, 83 (9): 1830--1832.
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