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Journal of Inorganic Materials

Journal of Inorganic Materials >

2009 , Vol. 24 >Issue 5: 1054 - 1058

DOI: https://doi.org/10.3724/SP.J.1077.2009.01054

Research Paper

Effect of Annealing Treatments on Scintillation Properties of Lu2Si2O7∶Ce Grown by Czochralski Method

  • FENG He ,
  • DING Dong-Zhou ,
  • LI Huan-Ying ,
  • LU Sheng ,
  • PAN Shang-Ke ,
  • CHEN Xiao-Feng ,
  • ZHANG Wei-Dong ,
  • REN Guo-Hao
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  • (R&D Center of Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China)

Received date: 2009-01-15

  Revised date: 2009-03-10

  Online published: 2009-09-20

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Abstract

Although the Lu2Si2O7∶Ce(LPS∶Ce) has a high light yield about 26000ph/MeV, the LPS∶Ce crystals grown by Czochralski(Cz) process usually display a low light yield. In present work, annealing treatments in different conditions were carried out on Cz grown LPS∶Ce with low luminescence efficiency, in order to investigate the effect of annealing treatment conditions on scintillation properties of LPS∶Ce, such as luminescence efficiency, absorption spectrum. It is found that annealing in argon atmosphere has a negligible effect on the scintillation properties of LPS∶Ce; annealing in air can dramatically improve the luminescence efficiency of LPS∶Ce. The optimized annealing mechanism is determined through the comparison between different annealing treatment: atmosphere of air; annealing temperature of 1400℃; annealing time depending on the dimension of the sample. The larger dimension is the longer annealing time. The change trend of charge transfer band in the absorption spectrum and UV-ray excitation and emission property of LPS∶Ce crystal are also discussed.

Key words： LPS∶Ce crystal; annealing mechanism; luminescence efficiency; absorption spectrum; emission spectrum

Cite this article

FENG He , DING Dong-Zhou , LI Huan-Ying , LU Sheng , PAN Shang-Ke , CHEN Xiao-Feng , ZHANG Wei-Dong , REN Guo-Hao . Effect of Annealing Treatments on Scintillation Properties of Lu2Si2O7∶Ce Grown by Czochralski Method[J]. Journal of Inorganic Materials, 2009 , 24(5) : 1054 -1058 . DOI: 10.3724/SP.J.1077.2009.01054

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