Using Pulsed Laser Deposition method, the La 0.9 Ce 0.1 MnO 3 thin film was epitaxial prepared on LaAlO3 (100) single crystal substrate. The XRD result shows the film has perovskite pseudocubic structure with preferential orientation (100). The R-T curves show the metal-insulator transition and CMR effect, and the T MI are 213K and 223K for 0T and 0.1T, respectively. The maximum MR is 38.5% at 0.1T. Correspondingly, the peak temperature at the maximum MR is 153K. This indicates that the films display CMR effect in the mental region. The fitting results show that the data satisfy R=R 0+R 1 T 2+R 2 T 4.5 for T<T MI, and for T>T MI, it is satisfied with small polaron model．The effect of the continue wave laser (532nm, 40mW) on the film was also investigated．Below T MI, the resistance increases．Above T MI there is a decrease of the resistance．The T MI shifts to the low temperature when the laser irradiates．This is attributed to the change of the spin
order in the film because of photoinducing, reduce the double exchange, and change electronic transport. The resistance meets the exponential foula R(t)=R 0+A exp(-t/τ), which can interpret the relaxation process from the photoinduced spin correlation state.
GAO Guo-Mian
,
CHEN Chang-Le
,
DENG Xiao-Long
,
HAN Li-An
,
WANG Yong-Cang
. Transport Properties and Photo-induced Effect in La 0.9 Ce 0.1 MnO3 Thin Film[J]. Journal of Inorganic Materials, 2007
, 22(5)
: 1011
-1014
.
DOI: 10.3724/SP.J.1077.2007.01011
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