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Journal of Inorganic Materials

Journal of Inorganic Materials >

2007 , Vol. 22 >Issue 4: 706 - 710

DOI: https://doi.org/10.3724/SP.J.1077.2007.00706

Research Paper

Influence of V2O5 on the Properties of BaTiO3-Y2O3-MgO Ceramics

  • LI Bo ,
  • ZHANG Shu-Ren ,
  • ZHOU Xiao-Hua
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  • School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China

Received date: 2006-08-31

  Revised date: 2006-10-16

  Online published: 2007-07-20

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Abstract

The microstructure and dielectric properties of V2O5-doped BaTiO3-Y2O3-MgO ternary system were studied. SEM shows that V ions can promote grain growth of BaTiO3 based ceramics, but decrease the density of sintered ceramics. XRD indicates that V-doped
samples have pseudocubic structure and the solubility limit of V is more than 1.0mol%. The results show that V can increase the intensity of Curie peak and improve the temperature stability of dielectric constant, because of the formation of core-shell-grains with thin shell layer, which is attributed to the fact that V ions can effectively inhibit the diffusion of Y and/or Mg ions into BaTO3 grains and change the distribution of doping ions in the grains. Moreover multivalent V ions can reinforce the nonreducibility of this system, and the insulation resistivity increases to 1013Ω·cm and dielectric loss decrease to 0.63% consequently. The high performance materials with dielectric constant of 2600 satisfying the X8R
requirement is achieved when 0.1mol% V is added.

Key words： BaTiO3; V2O5; microstructure; dielectric properties; multilayer ceramic capacitor

Cite this article

LI Bo , ZHANG Shu-Ren , ZHOU Xiao-Hua . Influence of V2O5 on the Properties of BaTiO3-Y2O3-MgO Ceramics
[J]. Journal of Inorganic Materials, 2007 , 22(4) : 706 -710 . DOI: 10.3724/SP.J.1077.2007.00706

References

[1] Kishi H, Mizuno Y, Chazono H. Jpn. J. Appl. Phys., 2003, 42(1): 1--15.
[2] 王 升, 张树人, 周晓华, 等(WANG Sheng, et al). 无机材料学报(Journal of Inorganic Materials), 2006, 21(2): 369--374.
[3] 周晓华, 张树人, 王 升, 等. 材料导报, 2006, 20(3): 132--143.
[4] 李 波, 张树人, 周晓华, 等. 复合材料学报. 2005, 22(4): 91--95.
[5] Saito H, Chazono H, Kishi H, et al. Jpn. J. Appl. Phys., 1991, 30(9B): 2307--2310.
[6] Okino Y, Shizuno H, Kusumi S, et al. Jpn. J. Appl. Phys., 1994, 33(9B): 5393--5396.
[7] Kishi H, Okino Y, Honda M, et al. Jpn. J. Appl. Phys., 1997, 36(9B): 5954--5957.
[8] Park Y, Kim Y H, Kim H G. Mat. Lett., 1996, 28(1--3): 101--106.
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