Electrical Properties of Lead Zirconate Titanate Thin Films Fabricated by Sol-Gel Processing

Journal of Inorganic Materials

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Electrical Properties of Lead Zirconate Titanate Thin Films Fabricated by Sol-Gel Processing

XIA Dong-Lin¹; LIU Mei-Dong²; ZHAO Xiu-Jian¹; ZHOU Xue-Dong¹

1.Key Laboratory for Silicate Materials Science and Engineering of Ministry of Education; Wuhan University of Technology; Wuhan 430070; China; 2.Department of Electronics Science and Technology; Huazhong University of Science and Technology; Wuhan 430074; China

Received:2003-01-23 Revised:2003-07-04 Published:2004-03-20 Online:2004-03-20

Abstract

Abstract: Lead zirconate titanate (Pb(Zr_0.53Ti_0.47)O₃, PZT) ferroelectric thin films were
deposited onto platinum coated silicon substrates with and without lead titanate(PbTiO₃,PT) seeding layers by a modified sol-gel processing
using zirconium nitrate as the zirconium source. The precursor solution for spin coating was prepared from lead acetate, tetrabutyl titanate, and
zirconium nitrate. The effect of the prepared PZT thin films with PT seedings on the microstructure and electrical properties were investigated.
The results show that the PZT thin films are of uniformity, density, and crack-free. The corresponding remanent polarization(P_r) and coercive
field(E_c) are 20μC/cm² and 59kV/cm respectively. Dielectric constant and loss tangent of PZT thin films with PT seedings are 385 and 0.03,
respectively.

Key words: lead zirconate titanate （PZT） film, PT seedings, sol-gel processing, rapid thermal annealing, hysteresis loop, Ⅰ-Ⅴ characteristic

CLC Number:

TQ174
TB43

XIA Dong-Lin,LIU Mei-Dong,ZHAO Xiu-Jian,ZHOU Xue-Dong. Electrical Properties of Lead Zirconate Titanate Thin Films Fabricated by Sol-Gel Processing[J]. Journal of Inorganic Materials.

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Electrical Properties of Lead Zirconate Titanate Thin Films Fabricated by Sol-Gel Processing

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