Photoelectrochemical Properties of MoSe2 Modified TiO2 Nanotube Arrays

doi:10.15541/jim20180463

Abstract

Abstract:

MoSe₂ was deposited by electrochemical reduction method on TiO₂ nanotube arrays which were prepared by anodic oxidation in ethylene glycol electrolyte, in which sodium molybdate and seleninic acid were used as raw materials. The composites were characterized by X-ray diffraction and scanning electron microscope, and I-V plot and electrochemical impedance spectroscopy were measured by electrochemical workstation. The results show that a p-n heterojunction is formed between molybdenum diselenide and titanium dioxide, which can reduce the combination of photo-generated electron-hole pairs and charge transfer resistance, and can increase its carrier concentration and light response current density. The composite deposited at -0.5 V in the electrolyte containg 2 mmol/L seleninic acid for 30 s exhibits optimum photo-electrochemical performance after 300 ℃ heat treatment, with a high photocurrent density of 1.17 mA/cm ² without bias, which is approximately three times higher than that of blank sample. And the charge transfer resistance decreased from 331.6 Ω/cm ² to 283.9 Ω/cm ². Selenide molybdenum agglomerates seriously to block the TiO₂nanotube once heat treatment over 330 ℃, resulting in a lower performance.

Key words: TiO₂ nanotube arrays, MoSe₂, electrochemical deposition, photoelectrochemical property

CLC Number:

TQ174

ZHANG Ya-Ping, DING Wen-Ming, ZHU Hai-Feng, HUANG Cheng-Xing, YU Lian-Qing, WANG Yong-Qiang, LI Zhe, XU Fei. Photoelectrochemical Properties of MoSe₂ Modified TiO₂ Nanotube Arrays[J]. Journal of Inorganic Materials, 2019, 34(8): 797-802.

Figures/Tables 7

Fig. 1 XRD patterns of MoSe2/TiO2

Fig. 2 SEM images of MoSe2/TiO2 (a-d) and EDS analysis (e) of sample in (b) Sampls deposited at -0.5 V with H2SeO3 concentration of (a) 0.5, (b) 4 mmol/L; Sampls deposited at (c) -0.45, (d) -0.7 V with H2SeO3 concentration of 2 mmol/L

Fig. 3 (a) Linear sweep voltammol/Lograms, (b) Nyquist diagrams and (c) Mott-Schottky plots for MoSe2/TiO2 samples deposited at -0.5 V with different H2SeO3 concentrations

Fig. 4 (a) Linear sweep voltammol/Lograms, (b) Nyquist diagrams and (c) Mott-Schottky plots for MoSe2/TiO2 samples deposited at different voltages with 2 mmol/L H2SeO3

Fig. 5 SEM images of MoSe2/TiO2 heat-treated at different temperatures (a) 270 ℃; (b) 300 ℃; (c) 330 ℃ (MoSe2/TiO2 deposited at -0.5 V in 2 mmol/L H2SeO3 for 30 s)

Fig. 6 (a) Linear sweep voltammol/Lograms, (b) Mott-Schottky, (c) Amperometric i-t curves, (d) Nyquist diagrams With insert showing Insert is equivalent circuit, and (e) schematic diagram of carrier for MoSe2/TiO2 heat-treated at different temperatures MoSe2/TiO2 deposited at -0.5 V in 2 mmol/L H2SeO3 for 30 s

Table 1 Equivalent circuit parameters of MoSe2/TiO2

Sample	R_b/(Ω?cm^-2)	C_sc/ (F?cm^-2)	R_sc/(Ω?cm^-2)	C_dl/(F?cm^-2)	R_ct/(Ω?cm^-2)
330 ℃	2.11	1.60×10^-3	11.67	1.3×10^-3	345.4
300 ℃	0.60	7.64×10^-4	61.67	8.0×10^-2	283.9
270 ℃	0.85	1.37×10^-3	19.74	1.6×10^-1	305.5
Unheated	1.94	2.49×10^-3	0.53	1.1×10^-3	331.6

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Photoelectrochemical Properties of MoSe₂ Modified TiO₂ Nanotube Arrays

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