Ga2O3 MOSFET Device with Al2O3 Gate Dielectric

doi:10.15541/jim20170528

Abstract

Abstract:

n-typed β-Ga₂O₃was homoepitaxially grown by metal organic chemical vapor deposition (MOCVD) on a Fe-doped semi-insulating (010) Ga₂O₃substrate. The structure consisted of a 600 nm undoped (UID) Ga₂O₃ buffer layer and 200 nm Si-doped channel layer. High-temperature Ohmic alloy experiments were taken on two kinds of n-typed β-Ga₂O₃ with Si donor concentrations of 3.0×10¹⁷and 1.0×10¹⁸ cm^-3. It’s hard to realize good Ohmic contact on the β-Ga₂O₃epitaxial layer with donor concentrations of 3.0×10¹⁷cm^-3. The lowest Ohmic value of 9.8 Ω•mm was obtained on the substrate with donor concentrations of 1.0×10¹⁸cm^-3. Metal-oxide-semiconductor field-effect transistor (MOSFET) was fabricated based on homoepitaxial β-Ga₂O₃ film with donor concentrations of 1.0×10¹⁸cm^-3, in which Al₂O₃ grown by atomic layer deposition (ALD) was used as gate dielectric. The drain saturation current of the fabricated device reached 108 mA/mm at V_gs of 2 V, and a high peak transconductance of 17 mS/mm was obtained. Due to poor gate leakage, the three-terminal off-state breakdown voltage was just 23 V at V_gs = -12 V. The breakdown characteristics can be improved by introducing HfO₂ with high dielectric constant or Al₂O₃/HfO₂ composite structure.

Key words: Ga₂O₃, MOSFET, drain saturation current, gate leakage

CLC Number:

TQ174

LV Yuan-Jie, SONG Xu-Bo, HE Ze-Zhao, TAN Xin, ZHOU Xing-Ye, WANG Yuan-Gang, GU Guo-Dong, FENG Zhi-Hong. Ga₂O₃ MOSFET Device with Al₂O₃ Gate Dielectric[J]. Journal of Inorganic Materials, 2018, 33(9): 976-980.

Figures/Tables 7

Fig. 1 Schematic cross section of the fabricated Ga2O3 MOSFET

Fig. 2 Change of Ohmic contact resistances with annealing temperature at different Si donor concentrations

Fig. 3 Microscope image of the fabricated Ga2O3 MOSFET

Fig. 4 Output characteristics of the Ga2O3 MOSFET

Table 1 Summary of electrical parameters for Ga2O3 MOSFET

	Doping concentration/cm^-3	Carrier mobility/ (cm²•V^-1•s^-1)	Drain source saturation current/ (mA•mm^-1)	Breakdown voltage/V	Ref.
1	3.0×10¹⁷	NR	26	370	[4]
2	4.8×10¹⁷	19.7	60	200	[1]
3	3.0×10¹⁷	70-95	78	755	[9]
4	2.3×10¹⁷	24	0.24	612	[11]
5	4.0×10¹⁷	111	80	479	[5]
6	1.3×10¹⁸	96	150	NR	[15]
	3.0×10¹⁷	42			This work
	1.0×10¹⁸	20	108	23	This work

Fig. 5 Transfer characteristics of the Ga2O3 MOSFET

Fig. 6 Three-terminal off-state breakdown characteristics for the Ga2O3 MOSFET

References 16

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Ga₂O₃ MOSFET Device with Al₂O₃ Gate Dielectric

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