Journal of Inorganic Materials ›› 2017, Vol. 32 ›› Issue (4): 443-448.DOI: 10.15541/jim20160201

• Orginal Article • Previous Articles    

Influence of N Doping on the Electronic Structure and Absorption Spectrum of Ca2SiO4: Eu2+ Phosphor

CHEN Hai-Tao1, 2, HUANG Xue-Fei1, HUANG Wei-Gang1   

  1. (1. College of Material Science and Engineering, Sichuan University, Chengdu 610064, China; 2. College of Physics and Engineering, Chengdu Normal University, Chengdu 611130, China)
  • Received:2016-03-30 Published:2017-04-20 Online:2017-03-24
  • About author:CHEN Hai-Tao(1967–), male, professor, PhD. E-mail: chqcht@sina.com
  • Supported by:
    National Natural Science Foundation of China (51401135);Foundation of Chengdu Normal University (YJRC2015-1)

Abstract:

The electronic structure and absorption spectrum of Ca2SiO4: Eu2+ was studied by using density functional theory. It is found that N atoms substituted provide many states around the Femi level, which leads to narrow optical band gap and interband transition originating from N2p to the Eu4f. In the N-doped Ca2SiO4: Eu2+ phosphor, Eu2+ ions experience a strong nephelauxetic effect and crystal field due to the coordinating nitrogen ions around the activated centers, which results in Eu4f and 5d states splitting. Thus, the red-shift of the absorption spectrum and high absorption band in the wavelength of 220-470 nm takes place for the N-doped Ca2SiO4: Eu2+ phosphor.

Key words: N-impurity, silicate phosphor, light emitting diodes (LEDs), density functional theory (DFT)

CLC Number: