Abstract: Oriented KTa_0.65Nb_0.35O₃ thin films were grown on SrTiO₃ (111) single crystal substrates by means of potassium acetate, tantalum ethoxide and niobium ethoxide as
precursors. The presintering technological conditions were established by DTA--TGA. It was discovered that perovskite structure KTN would decompose above 950℃ to form
potassium-deficient phase K₂Ta₄O₁₁. The homogeneous, high-density, 0.2μm grain size perovskite structure KTN thin films were obtained when each layer presintered above
450℃ for 1h, multilayers sintered at 750℃ for 2h, and all of heating and cooling rate was 1～2℃/min. The film grain size increased with sintering temperature
and time, at high temperature, aggregate of grains, holes and crackles formed on the film surface. The sintering temperature must be controlled under 950℃.

Key words: potassium tantalate niobate thin films, orientation growth, formation and decomposition of perovskite structure KTN