Observation on Defects in Sapphire Single Crystal Grown by the EFG Method

Journal of Inorganic Materials

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Observation on Defects in Sapphire Single Crystal Grown by the EFG Method

MA Sheng-Li; JING Xiao-Tian; SHUN Qiao-Yan

School of Material Science and Engincering; Xi an University of Technology Xi an 710048 China

Received:1996-01-23 Revised:1997-03-10 Published:1998-02-20 Online:1998-02-20

Abstract

Abstract: Sapphire (1102) ribbon and (0001) bar were prepared by tile EFG methods and its crystal defects, such as dislocation, subgrain boundary as well as faceting plane were investingated experimentally. The influence of growth process on crystal defects was discussed. It was found that crystal growth rate and the quality of seed crystals were the two critical factors ti.hich affect the formation of defects in sapphire single crystals.

Key words: the EFG method, sapphire single crystal, crystal defect, crystal growth rate

CLC Number:

TQ164

MA Sheng-Li,JING Xiao-Tian,SHUN Qiao-Yan. Observation on Defects in Sapphire Single Crystal Grown by the EFG Method[J]. Journal of Inorganic Materials.

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Observation on Defects in Sapphire Single Crystal Grown by the EFG Method

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