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Journal of Inorganic Materials

Journal of Inorganic Materials

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Photoluminescence of Modulation Doping GaAs/Al0.27Ga0.73AsMultiquantum Well Structure

CHENG Xing-Kui; CHINV．W．L．+; OSOTCHANT．+; TANSYEYT．L．+; VAUGHAN M．R．++; GRIFFITHSG．J．++   

  1. Institute of OPtoelectronic Materials and Devices; Shandong University Jinan 250100 China; +Department of physics; Macquarie University; NSW 2109; Ausralia; ++CSIRO Division of Radiophysics Epping, NSW 2121, Australia
  • Received:1997-05-05 Revised:1997-08-04 Published:1998-06-20 Online:1998-06-20

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Abstract: The photolumenescence spectra of modulation doing GaAs/Al0.27Ga0.73As multiquantum well structure were measured. There are a strong luminescence peak
and several low energy weak peaks in the luminescence spectra. The strong one arises from transition of electron at ground state in well to heavy hole and these low energy
weak peaks may be attributed to transition of electron at DX centers in Al0.27Ga0.73As to SiAs atoms. On this view, we can come to the conclusion
that the DX centers in Si-doped AlGaAs appear as four levels and their activation energies are about 0.35eV, 0.37eV, 0.39eV and 0.41eV, respectively.

Key words: modulation doping, GaAs/AlGaAs multiquantum well, phototuminescence

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