Abstract: An amorphous boron-carbon-nitrogen film was synthesized by plasma source ion nitriding, that is nitrogen ion implantation at low energy (1～3 keV) and superhigh dose
(10¹⁹～10²⁰ ions·cm^-2) and simultaneously indiffusion. Auger electron spectroscopy and diffuse reflectance Fourier transform
infrared spectra showed that the films are mainly composed of sp² and sp³ plain (graphite- and pyridine-like) microdomains
with a fixed B/C ratio and a controllable nitrogen content at a nitriding temperature of 500℃ for a nitriding time from 2 to 6 h. The formation of sp³ plain microdomains strongly depends
on the nitriding temperature and softly on the nitriding time.

Key words: plasma source ion nitriding, boron-carbon-nitrogen film